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CNA1012K

更新时间： 2024-11-06 21:53:39
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 88K
描述
Photo lnterrupter For contactless SW, object detection

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中文翻译

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CNA1012K 技术参数

生命周期：Obsolete包装说明：PISTR104-013, 4 PIN
Reach Compliance Code：unknown风险等级：5.84
Coll-Emtr Bkdn Voltage-Min：30 V配置：SINGLE
最大暗电源：200 nA最大正向电流：0.05 A
间隙大小：5 mm安装特点：THROUGH HOLE MOUNT
功能数量：1最大通态电压：30 V
标称通态集电极电流：0.7 mA最高工作温度：85 °C
最低工作温度：-25 °C光电设备类型：TRANSISTOR OUTPUT SLOTTED SWITCH
输出电路类型：Transistor标称槽宽：5 mm
表面贴装：NOBase Number Matches：1

CNA1012K 数据手册

 浏览型号CNA1012K的Datasheet PDF文件第2页浏览型号CNA1012K的Datasheet PDF文件第3页 
Transmissive Photosensors (Photo lnterrupters)  
CNA1012K (ON1114)  
Photo lnterrupter  
For contactless SW, object detection  
■ Overview  
Unit: mm  
±.45±±.1  
CNA1012K is a photocoupler in which a high efficiency GaAs  
infrared light emitting diode is used as the light emitting element, and  
a high sensitivity phototransistor is used as the light detecting ele-  
ment. The two elements are arranged so as to face each other, and  
objects passing between them are detected.  
Mark for indicating  
LED side  
13.±±±.3  
5.±±±.2  
±.45±±.1  
A
■ Features  
2-R±.5  
Device  
center  
• Highly precise position detection: 0.3 mm  
• Wide gap between emitting and detecting elements, suitable for  
thick plate detection  
• Fast response: tr , tf = 6 µs (typ.)  
• Small output current variation against change in temperature  
• Large output current  
A'  
2-±.45±±.2  
3
(1±.±)  
(2.54)  
SEC. A-A'  
2
1
1: Anode  
2: Cathode  
3: Collector  
4: Emitter  
4
■ Absolute Maximum Ratings Ta = 25°C  
PISTR104-013 Package  
(Note) ( ) Dimension is reference  
Parameter  
Input (Light Reverse voltage  
emitting diode) Forward current  
Power dissipation *  
Symbol Rating  
Unit  
V
VR  
IF  
3
50  
75  
30  
mA  
mW  
V
1
PD  
Output (Photo Collector-emitter voltage VCEO  
transistor)  
(Base open)  
Emitter-collector voltage VECO  
(Base open)  
5
V
Collector current  
Collector power dissipation *  
IC  
20  
100  
mA  
mW  
°C  
Note) 1: Input power derating ratio is 1.0 mW/°C at  
*
2
PC  
Ta ≥ 25°C.  
Temperature Operating ambient temperature Topr  
Storage temperature  
−25 to +85  
2: Output power derating ratio is 1.34 mW/°C  
at Ta ≥ 25°C.  
*
Tstg −30 to +100  
°C  
■ Electrical-Optical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VF  
Conditions  
Min  
Typ  
Max  
1.5  
Unit  
V
Input  
Forward voltage  
IF = 50 mA  
VR = 3 V  
VCE = 10 V  
1.2  
characteristics Reverse current  
IR  
10  
µA  
nA  
200  
Output  
Collector-emitter cutoff current ICEO  
(Base open)  
characteristics  
capacitance  
CC  
IC  
VCE = 10 V, f = 1 MHz  
VCE = 10 V, IF = 20 mA  
5
pF  
mA  
V
Collector-emitter  
Transfer  
Collector current  
0.7  
characteristics  
Collector-emitter saturation voltage VCE(sat) IF = 50 mA, IC = 0.1 mA  
0.3  
Rise time *  
Fall time *  
tr  
tf  
VCC = 10 V, IC = 1 mA  
RL = 100 Ω  
6
6
µs  
µs  
Note) 1. Input and output are practiced by electricity.  
2. This device is designed be disregarded radiation.  
3. : Switching time measurement circuit  
*
Sig. in  
VCC  
tr : Rise time  
tf : Fall time  
(Input pulse)  
90%  
10%  
(Output pulse)  
Sig. out  
RL  
50Ω  
tr  
tf  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: April 2004  
SHG00019BED  
1
123

中文翻译

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