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CNA1302 PDF预览

CNA1302

更新时间: 2024-11-24 21:22:27
品牌 Logo 应用领域
松下 - PANASONIC 输出元件光电
页数 文件大小 规格书
3页 60K
描述
Transistor Output Slotted Switch, 1-Channel, 2mm Slot Width

CNA1302 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.77其他特性:HIGH RELIABILITY
Coll-Emtr Bkdn Voltage-Min:35 V配置:SINGLE
最大暗电源:100 nA最大正向电流:0.05 A
间隙大小:2 mm安装特点:THROUGH HOLE MOUNT
功能数量:1最大通态电流:0.0004 A
最大通态电压:35 V标称通态集电极电流:0.04 mA
最高工作温度:85 °C最低工作温度:-25 °C
光电设备类型:TRANSISTOR OUTPUT SLOTTED SWITCH输出电路类型:Transistor
标称槽宽:2 mm表面贴装:NO
Base Number Matches:1

CNA1302 数据手册

 浏览型号CNA1302的Datasheet PDF文件第2页浏览型号CNA1302的Datasheet PDF文件第3页 
Transmissive Photosensors (Photo Interrupters)  
CNA1302  
Photo Interrupter  
Unit : mm  
A
Slit width  
(0.3)  
For contactless SW, object detection  
A'  
5.0  
Overview  
SEC. A-A'  
4.2  
CNA1302 is an ultraminiature, highly reliable transmissive  
photosensor in which a high efficiency GaAs infrared light emitting  
diode chip and a high sensitivity Si phototransistor chip are integrated  
in a double molded resin package.  
1.5 2.0 1.5  
(C0.5)  
Device  
center  
Gate the rest  
0.3 max.  
(C0.3)  
+0.1  
ø1.5  
–0  
2-0.25  
*3.8  
2-0.5  
Features  
*2.54  
Ultraminiature : 4.2 × 5.0 mm (height : 5.2 mm)  
2
1
4
3
Fast response : tr, tf = 35 µs (typ.)  
Highly precise position detection : 0.15 mm  
Gap width : 2.0 mm  
1
2
3
4
Pin connection  
(Note)  
1. Tolerance unless otherwise specified is ±0.2  
2. ( ) Dimension is reference  
3. * is dimension at the root of leads  
4. Burrs should be less than 0.15mm  
Absolute Maximum Ratings (Ta = 25˚C)  
Parameter  
Symbol Ratings Unit  
*1 Input power derating ratio is  
1.0mW/˚C at Ta 25˚C.  
*2 Output power derating ratio is  
Reverse voltage (DC)  
Forward current (DC)  
Power dissipation  
Collector current  
VR  
6
V
mA  
mW  
mA  
V
Input (Light  
IF  
50  
75  
20  
35  
6
emitting diode)  
1.0mW/˚C at Ta 25˚C.  
*3 Soldering time is within 5 seconds.  
*1  
PD  
IC  
Collector to emitter voltage VCEO  
Emitter to collector voltage VECO  
Output (Photo  
transistor)  
V
*2  
Collector power dissipation PC  
75  
mW  
more than 1mm  
Operating ambient temperature  
Topr –25 to +85 ˚C  
Temperature Storage temperature  
Soldering temperature  
Tstg – 40 to +100 ˚C  
Soldering bath  
*3  
Tsol  
260  
˚C  
Electrical Characteristics (Ta = 25˚C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max Unit  
Forward voltage (DC)  
Reverse current (DC)  
VF IF = 20mA  
IR VR = 3V  
1.2  
1.4  
10  
V
µA  
nA  
µA  
V
Input  
characteristics  
Output characteristics Collector cutoff current  
ICEO VCE = 20V  
100  
400  
0.4  
Collector current  
IC VCE = 5V, IF = 5mA  
40  
Transfer  
characteristics  
Collector to emitter saturation voltage VCE(sat) IF = 10mA, IC = 40µA  
Response time  
tr , tf* VCC = 5V, IC = 0.1mA, RL = 1000  
35  
µs  
* Switching time measurement circuit  
Sig.IN  
VCC  
td : Delay time  
(Input pulse)  
tr : Rise time (Time required for the collector current to increase  
from 10% to 90% of its final value)  
90%  
10%  
Sig.OUT  
(Output pulse)  
td  
tf : Fall time (Time required for the collector current to decrease  
from 90% to 10% of its initial value)  
50  
RL  
tr  
tf  
1

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