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CNA1301H PDF预览

CNA1301H

更新时间: 2024-11-08 22:28:43
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 66K
描述
Photo Interrupter

CNA1301H 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:3.80 X 4.20 MM, 4.30 MM HEIGHT, ULTRA MINIATURE, PLASTIC, PISMW104-001, 4 PIN
Reach Compliance Code:unknown风险等级:5.82
Coll-Emtr Bkdn Voltage-Min:35 V配置:SINGLE
最大暗电源:100 nA最大正向电流:0.05 A
间隙大小:1.4 mm安装特点:THROUGH HOLE MOUNT
功能数量:1最大通态电压:5 V
标称通态集电极电流:0.1 mA最高工作温度:85 °C
最低工作温度:-25 °C光电设备类型:TRANSISTOR OUTPUT SLOTTED SWITCH
输出电路类型:Transistor标称槽宽:1.4 mm
表面贴装:NOBase Number Matches:1

CNA1301H 数据手册

 浏览型号CNA1301H的Datasheet PDF文件第2页浏览型号CNA1301H的Datasheet PDF文件第3页 
Transmissive Photosensors (Photo Interrupters)  
CNA1301H  
Photo Interrupter  
Unit : mm  
Slit width  
(0.3)  
2.0  
4.2  
For contactless SW, object detection  
1.2  
Overview  
2.0±0.5  
CNA1301H is an ultraminiature, highly reliable transmissive  
photosensor in which a high efficiency GaAs infrared light emitting  
diode chip and a high sensitivity Si phototransistor chip are integrated  
in a double molded resin package.  
SEC. A-A'  
3.8  
Optical  
center  
3-1.4  
A
(C0.5)  
Features  
A'  
2-1.7±0.1  
1.5±0.1  
Ultraminiature : 3.8 × 4.2 mm (height : 4.2 mm)  
Not solderd  
1.0 max.  
2
1
4
3
2-ø0.7±0.1  
Highly precise position detection : 0.15 mm  
Gap width : 1.4 mm  
1
3
Resin  
the rest  
2
4
Pin connection  
Support for thin equipment (permits direct mounting on printed  
circuit board  
1: Anode 3: Collector  
2: Cathode 4: Emitter  
(Note)  
1. Tolerance unless otherwise specified is ±0.2  
2. ( ) Dimension is reference  
Absolute Maximum Ratings (Ta = 25˚C)  
Parameter  
Symbol Ratings Unit  
Reverse voltage (DC)  
Forward current (DC)  
Power dissipation  
Collector current  
VR  
6
V
mA  
mW  
mA  
V
Input (Light  
IF  
50  
75  
20  
35  
6
emitting diode)  
*1  
PD  
IC  
*1 Input power derating ratio is  
1.0 mW/˚C at Ta 25˚C.  
*2 Output power derating ratio is  
Collector to emitter voltage VCEO  
Output (Photo  
transistor)  
Emitter to collector voltage VECO  
V
1.0 mW/˚C at Ta 25˚C.  
*2  
Collector power dissipation PC  
75  
mW  
Operating ambient temperature  
Storage temperature  
Topr –25 to +85 ˚C  
Temperature  
Tstg – 40 to +100  
˚C  
Electrical Characteristics (Ta = 25˚C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max Unit  
Forward voltage (DC)  
Reverse current (DC)  
VF IF = 20mA  
1.2  
1.4  
10  
V
µA  
nA  
µA  
V
Input  
characteristics  
IR VR = 3V  
Output characteristics Collector cutoff current  
ICEO VCE = 20V  
100  
1300  
0.4  
Collector current  
IC VCE = 5V, IF = 5mA  
100  
Transfer  
characteristics  
Collector to emitter saturation voltage VCE(sat) IF = 10mA, IC = 40µA  
Response time  
tr , tf* VCC = 5V, IC = 0.1mA, RL = 1000  
35  
µs  
* Switching time measurement circuit  
Sig.IN  
VCC  
td : Delay time  
(Input pulse)  
tr : Rise time (Time required for the collector current to increase  
from 10% to 90% of its final value)  
90%  
10%  
Sig.OUT  
(Output pulse)  
td  
tf : Fall time (Time required for the collector current to decrease  
from 90% to 10% of its initial value)  
50  
RL  
tr  
tf  
1

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