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CMUT5087E_10 PDF预览

CMUT5087E_10

更新时间: 2024-12-01 09:27:59
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 349K
描述
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CMUT5087E_10 数据手册

 浏览型号CMUT5087E_10的Datasheet PDF文件第2页 
CMUT5087E PNP  
CMUT5088E NPN  
www.centralsemi.com  
ENHANCED SPECIFICATION  
SURFACE MOUNT  
DESCRIPTION:  
COMPLEMENTARY  
SILICON TRANSISTORS  
The CENTRAL SEMICONDUCTOR CMUT5087E and  
CMUT5088E are Silicon transistors in an ULTRAmini™  
surface mount package with enhanced specifications  
designed for applications requiring high gain and low  
noise.  
MARKING CODES: CMUT5087E: U87  
CMUT5088E: U88  
SOT-523 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
50  
50  
CBO  
Collector-Emitter Voltage  
V
V
CEO  
EBO  
Emitter-Base Voltage  
V
5.0  
V
Continuous Collector Current  
Power Dissipation  
I
100  
mA  
mW  
°C  
C
P
350  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
TYP  
SYMBOL  
TEST CONDITIONS  
MIN  
NPN PNP MAX  
UNITS  
nA  
nA  
V
I
I
V
V
=20V  
50  
50  
CBO  
EBO  
CB  
EB  
=3.0V  
BV  
I =100µA  
50  
50  
135 150  
CBO  
CEO  
EBO  
C
BV  
I =1.0mA  
C
65  
8.7  
45  
105  
7.5  
50  
V
BV  
I =100µA  
5.0  
V
E
V
I =10mA, I =1.0mA  
100  
400  
800  
900  
mV  
mV  
mV  
CE(SAT)  
C
B
♦♦ VCE(SAT)  
I =100mA, I =10mA  
110 225  
700 700  
430 390  
435 380  
430 350  
C
B
V
I =10mA, I =1.0mA  
BE(SAT)  
C B  
h
V
=5.0V, I =0.1mA  
300  
300  
300  
50  
FE  
CE  
CE  
CE  
CE  
CE  
CB  
BE  
CE  
CE  
C
h
V
V
V
V
V
V
V
V
=5.0V, I =1.0mA  
FE  
C
h  
=5.0V, I =10mA  
C
FE  
h
=5.0V, I =100mA  
125  
75  
♦♦  
FE  
C
f
=5.0V, I =500µA, f=20MHz  
C
100  
MHz  
pF  
T
C
=5.0V, I =0, f=1.0MHz  
4.0  
15  
ob  
ib  
E
C
=0.5V, I =0, f=1.0MHz  
pF  
C
h
=5.0V, I =1.0mA, f=1.0kHz  
350  
1400  
fe  
C
NF  
=5.0V, I =100μA, R =10kΩ f=10Hz to 15.7kHz  
3.0  
dB  
C
S
Enhanced specification  
♦♦ Additional Enhanced specification  
R2 (9-February 2010)  

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