Datasheet > CMST2907ATRPBFREE

CMST2907ATRPBFREE

更新时间： 2024-11-24 06:19:43

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	400K
描述
Transistor,

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中文翻译

获取价格

技术参数
数据手册

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CMST2907ATRPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	0.6 A	配置：	Single
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.275 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	200 MHz	Base Number Matches：	1

CMST2907ATRPBFREE 数据手册

CMST2907A

www.centralsemi.com

SURFACE MOUNT

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMST2907A

type is a PNP silicon transistor manufactured by

the epitaxial planar process, epoxy molded in a

SUPERmini™surface mount package, designed

for small signal, general purpose and switching

applications.

MARKING CODE: 2FC

SOT-323 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Continuous Collector Current

Power Dissipation

600

°C

275

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

455

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

µA

=50V

CBO

CEV

=50V, T =125°C

=30V, V =0.5V

I =10µA

CBO

CEO

I =10mA

I =10µA

5.0

EBO

I =150mA, I =15mA

0.4

1.6

1.3

2.6

CE(SAT)

BE(SAT)

I =500mA, I =50mA

I =150mA, I =15mA

I =500mA, I =50mA

=10V, I =0.1mA

100

=10V, I =1.0mA

=10V, I =10mA

=10V, I =150mA

300

=10V, I =500mA

=20V, I =50mA, f=100MHz

200

MHz

R4 (9-February 2010)

中文翻译

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