CMST3410

更新时间： 2024-11-19 03:26:07

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	86K
描述
SURFACE MOUNT SUPERmini COMPLEMENTARY SILICON LOW VCE(SAT) TRANSISTORS

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中文翻译

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数据手册

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CMST3410 数据手册

CMST3410 NPN

CMST7410 PNP

Central

Semiconductor Corp.

SURFACE MOUNT

SUPERmini^TM

COMPLEMENTARY SILICON

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMST3410,

CMST7410 types are complementary silicon

transistors manufactured by the epitaxial planar

process, epoxy molded in a SUPERmini^TMsurface

mount package, designed for battery driven,

handheld devices requiring high current and low

LOW V

TRANSISTORS

CE(SAT)

voltages.

CE(SAT)

MARKING CODES:

CMST3410: C03

CMST7410: C07

SOT-323 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

6.0

1.0

1.5

275

Collector Current (Peak)

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T T

J, stg

-65 to +150

455

°C

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

CMST3410 CMST7410

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

100

UNITS

=40V

CBO

=6.0V

100

EBO

I =100µA

CBO

I =10mA

CEO

I =100µA

6.0

EBO

I =50mA, I =5.0mA

CE(SAT)

I =100mA, I =10mA

CE(SAT)

C B

I =200mA, I =20mA

150

250

400

450

1.1

0.9

CE(SAT)

I =500mA, I =50mA

130

200

250

150

220

275

CE(SAT)

I =800mA, I =80mA

CE(SAT)

C B

I =1.0A, I =100mA

C B

CE(SAT)

I =800mA, I =80mA

BE(SAT)

=1.0V, I =10mA

BE(ON)

=1.0V, I =10mA

100

=1.0V, I =100mA

300

=1.0V, I =500mA

=1.0V, I =1.0A

=10V, I =50mA, f=100MHz

100

MHz

=10V, I =0, f=1.0MHz (CMST3410)

=10V, I =0, f=1.0MHz (CMST7410)

R0 (5-April 2005)

中文翻译

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