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CMST3410TIN/LEAD PDF预览

CMST3410TIN/LEAD

更新时间: 2024-11-19 13:06:59
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 402K
描述
Small Signal Bipolar Transistor,

CMST3410TIN/LEAD 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:,Reach Compliance Code:not_compliant
风险等级:5.82JESD-609代码:e0
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:TIN LEAD
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CMST3410TIN/LEAD 数据手册

 浏览型号CMST3410TIN/LEAD的Datasheet PDF文件第2页 
CMST3410 NPN  
CMST7410 PNP  
www.centralsemi.com  
SURFACE MOUNT  
COMPLEMENTARY LOW V  
DESCRIPTION:  
CE(SAT)  
The CENTRAL SEMICONDUCTOR CMST3410,  
CMST7410 types are complementary silicon transistors  
manufactured by the epitaxial planar process, epoxy  
molded in a SUPERmini™ surface mount package,  
designed for battery driven, handheld devices requiring  
SILICON TRANSISTORS  
high current and low V  
voltages.  
CE(SAT)  
MARKING CODES: CMST3410: C03  
CMST7410: C07  
SOT-323 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
SYMBOL  
UNITS  
V
V
V
A
A
mW  
°C  
A
V
V
V
40  
25  
6.0  
1.0  
1.5  
CBO  
CEO  
EBO  
I
C
I
CM  
P
275  
-65 to +150  
455  
D
T , T  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
CMST3410 CMST7410  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
TYP  
MAX  
100  
100  
UNITS  
nA  
nA  
V
V
V
mV  
mV  
mV  
mV  
mV  
mV  
V
I
I
V
V
=40V  
=6.0V  
CBO  
EBO  
CB  
EB  
BV  
BV  
BV  
I =100µA  
40  
25  
6.0  
CBO  
CEO  
EBO  
C
I =10mA  
C
I =100µA  
E
V
V
V
V
V
V
V
V
I =50mA, I =5.0mA  
20  
35  
75  
130  
200  
250  
25  
40  
80  
150  
220  
275  
50  
75  
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
B
B
B
B
I =100mA, I =10mA  
C
I =200mA, I =20mA  
150  
250  
400  
450  
1.1  
0.9  
C
I =500mA, I =50mA  
C
I =800mA, I =80mA  
C
B
I =1.0A, I =100mA  
C
B
I =800mA, I =80mA  
C
B
C
V
=1.0V, I =10mA  
V
CE  
CE  
CE  
CE  
CE  
CE  
CB  
CB  
h
h
h
h
V
V
V
V
V
V
V
=1.0V, I =10mA  
100  
100  
100  
50  
C
=1.0V, I =100mA  
300  
FE  
FE  
FE  
C
=1.0V, I =500mA  
C
=1.0V, I =1.0A  
C
f
=10V, I =50mA, f=100MHz  
100  
MHz  
pF  
pF  
T
C
C
C
=10V, I =0, f=1.0MHz (CMST3410)  
10  
15  
ob  
ob  
E
=10V, I =0, f=1.0MHz (CMST7410)  
E
R1 (9-February 2010)  

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