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CMST5087 PDF预览

CMST5087

更新时间: 2024-11-19 03:26:07
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
2页 115K
描述
SURFACE MOUNT SUPERmini PNP SILICON TRANSISTORS

CMST5087 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.24Is Samacsys:N
其他特性:LOW NOISE最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):250JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

CMST5087 数据手册

 浏览型号CMST5087的Datasheet PDF文件第2页 
TM  
CMST5086  
CMST5087  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
TM  
SUPERmini  
DESCRIPTION:  
PNP SILICON TRANSISTORS  
The CENTRAL SEMICONDUCTOR CMST5086,  
CMST5087 types are PNP silicon transistors  
manufactured by the epitaxial planar process,  
TM  
epoxy molded in a SUPERmini surface mount  
package, designed for applications requiring  
high gain and low noise.  
MARKING CODES: CMST5086: 2PC  
CMST5087: 2QC  
SOT-323 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
V
V
V
mA  
mW  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
50  
50  
3.0  
50  
CBO  
CEO  
EBO  
C
P
I
Power Dissipation  
275  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
J stg  
-65 to +150  
455  
°C  
°C/W  
Θ
JA  
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)  
A
CMST5086  
CMST5087  
SYMBOL  
CBO  
CBO  
TEST CONDITIONS  
MIN MAX  
MIN MAX  
UNITS  
I
I
V
V
=10V  
=35V  
10  
50  
10  
50  
nA  
nA  
V
CB  
CB  
BV  
BV  
BV  
I =100µA  
50  
50  
CBO  
CEO  
EBO  
C
I =1.0mA  
50  
50  
V
C
I =100µA  
3.0  
3.0  
V
E
V
V
I =10mA, I =1.0mA  
0.30  
0.85  
0.30  
0.85  
V
CE(SAT)  
BE(SAT)  
FE  
C
B
I =10mA, I =1.0mA  
V
C
B
h
h
h
V
=5.0V, I =0.1mA  
150  
150  
150  
40  
500  
250 800  
250  
250  
CE  
CE  
CE  
CE  
CB  
CE  
CE  
C
V
V
V
V
V
V
=5.0V, I =1.0mA  
FE  
C
=5.0V, I =10mA  
FE  
C
f
=5.0V, I =500µA, f=20MHz  
40  
MHz  
pF  
T
C
C
=5.0V, I =0, f=1.0MHz  
4.0  
600  
4.0  
ob  
fe  
E
h
=5.0V, I =1.0mA, f=1.0kHz  
150  
250 900  
C
NF  
=5.0V, I =20mA, R =10kΩ  
C S  
f=10Hz to 15.7kHz  
=5.0V, I =100µA, R =3.0kΩ  
3.0  
3.0  
2.0  
2.0  
dB  
dB  
NF  
V
CE  
f=1.0kHz  
C
S
R2 (4-January 2004)  

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