Datasheet > CMST5086TRPBFREE

CMST5086TRPBFREE

更新时间： 2024-11-20 05:47:51

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	401K
描述
Transistor,

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中文翻译

获取价格

技术参数
数据手册

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CMST5086TRPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	0.05 A	配置：	Single
最小直流电流增益 (hFE)：	150	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.275 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	40 MHz	Base Number Matches：	1

CMST5086TRPBFREE 数据手册

CMST5086

CMST5087

www.centralsemi.com

SURFACE MOUNT

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMST5086,

CMST5087 types are PNP silicon transistors

manufactured by the epitaxial planar process, epoxy

molded in a SUPERmini™ surface mount package,

designed for applications requiring high gain and low

noise.

MARKING CODES: CMST5086: 2PC

CMST5087: 2QC

SOT-323 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

3.0

Continuous Collector Current

Power Dissipation

°C

275

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

455

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

CMST5086

MIN MAX

CMST5087

MIN MAX

SYMBOL

TEST CONDITIONS

UNITS

=10V

=35V

CBO

I =100μA

3.0

CBO

CEO

EBO

I =1.0mA

I =100μA

I =10mA, I =1.0mA

0.30

0.85

500

0.30

0.85

CE(SAT)

BE(SAT)

I =10mA, I =1.0mA

=5.0V, I =0.1mA

150

250 800

=5.0V, I =1.0mA

250

=5.0V, I =10mA

=5.0V, I =500μA, f=20MHz

MHz

=5.0V, I =0, f=1.0MHz

4.0

600

4.0

=5.0V, I =1.0mA, f=1.0kHz

150

250 900

=5.0V, I =20mA, R =10kΩ

C S

f=10Hz to 15.7kHz

3.0

2.0

=5.0V, I =100μA, R =3.0kΩ

f=1.0kHz

R3 (9-February 2010)

中文翻译

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