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CMST2907ABKPBFREE

更新时间： 2024-11-23 13:06:59

品牌	Logo	应用领域
CENTRAL		晶体小信号双极晶体管开关光电二极管
页数	文件大小	规格书
2页	98K
描述
Transistor,

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技术参数
数据手册

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CMST2907ABKPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	0.6 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.275 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	200 MHz
Base Number Matches：	1

CMST2907ABKPBFREE 数据手册

浏览型号CMST2907ABKPBFREE的Datasheet PDF文件第2页

Ce n t r a l

NEW

S e m ic o n d u c t o r Co r p .

CMST2907A

SUPER-MINI

DESCRIPTION:

PNP SILICON TRANSISTOR

The CENTRAL SEMICONDUCTOR

CMST2907A type is an PNP silicon transistor

manufactured by the epitaxial planar process,

epoxy molded in a super-mini surface mount

package, designed for small signal general

purpose and switching applications.

SUPER

mini

SOT-323 CASE

MAXIMUM RATINGS: (T =25 C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

5.0

600

250

EBO

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

-65 to +150

500

J stg

C/W

ELECTRICAL CHARACTERISTICS: (T =25 C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=50V

µA

CBO

=50V, T =125 C

CBO

=30V, V =0.5V

CEV

I =10µA

CBO

I =10mA

CEO

I =10µA

5.0

EBO

I =150mA, I =15mA

0.4

1.6

1.3

2.6

CE(SAT)

I =500mA, I =50mA

CE(SAT)

I =150mA, I =15mA

BE(SAT)

I =500mA, I =50mA

BE(SAT)

=10V, I =0.1mA

=10V, I =1.0mA

100

248

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