是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.61 | 最大漏极电流 (Abs) (ID): | 0.16 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
最大功率耗散 (Abs): | 0.125 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CMRDM3575TRPBFREE | CENTRAL |
获取价格 |
暂无描述 | |
CMRDM3590 | CENTRAL |
获取价格 |
SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | |
CMRDM3590_10 | CENTRAL |
获取价格 |
SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS | |
CMRDM3590_12 | CENTRAL |
获取价格 |
SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | |
CMRDM3590TIN/LEAD | CENTRAL |
获取价格 |
Small Signal Field-Effect Transistor, | |
CMRDM3590TR | CENTRAL |
获取价格 |
Small Signal Field-Effect Transistor, 0.16A I(D), 20V, 2-Element, N-Channel, Silicon, Meta | |
CMRDM3590TRPBFREE | CENTRAL |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
CMRDM7590 | CENTRAL |
获取价格 |
SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS | |
CMRDM7590_12 | CENTRAL |
获取价格 |
SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | |
CMRDM7590BKLEADFREE | CENTRAL |
获取价格 |
Transistor |