CMRDM7590TRPBFREE

更新时间： 2024-11-08 13:07:03

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CMRDM7590TRPBFREE 数据手册

CMRDM7590

SURFACE MOUNT

DUAL P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFETS

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMRDM7590 is

an Enhancement-mode Dual P-Channel Field Effect

Transistor designed for high speed pulsed amplifier

and driver applications. This MOSFET offers Low

and Low Threshold Voltage.

DS(ON)

MARKING CODE: CW

FEATURES:

SOT-963 CASE

• Power Dissipation: 125mW

• Low Package Profile: 0.5mm (MAX)

• Device is Halogen Free by design

APPLICATIONS:

• Load/Power Switches

• Low r

DS(ON)

• Low Threshold Voltage

• Power Supply Converter Circuits

• Battery Powered Portable Devices

• Logic Level Compatibility

• Small SOT-963 Surface Mount Package

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

SYMBOL

UNITS

°C

8.0

140

180

125

stg

Continuous Drain Current, t <5.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

1000

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

100

UNITS

, I

=5.0V, V =0

GSSF GSSR

=5.0V, V =0

DSS

=16V, V =0

100

=0, I =250μA

DSS

I =250μA

0.4

1.0

5.0

7.0

GS(th)

DS GS, D

=4.5V, I =100mA

4.0

5.5

8.0

DS(ON)

=2.5V, I =50mA

=1.8V, I =20mA

=1.5V, I =10mA

=1.2V, I =1.0mA

=5.0V, I =125mA

1.3

1.0

=15V, V =0, f=1.0MHz

rss

iss

=15V, V =0, f=1.0MHz

2.7

oss

=10V, V =4.5V, I =200mA

off

=10V, V =4.5V, I =200mA

210

R1 (8-February 2010)

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