Datasheet > CMRDM3590_10

CMRDM3590_10

更新时间： 2024-09-20 09:27:55

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	416K
描述
SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CMRDM3590_10 数据手册

CMRDM3590

SURFACE MOUNT

DUAL N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFETS

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMRDM3590 is

an Enhancement-mode Dual N-Channel Field Effect

Transistor, manufactured by the N-Channel DMOS

Process, designed for high speed pulsed amplifier and

driver applications. This MOSFET offers Low r

and Low Threshold Voltage.

DS(ON)

MARKING CODE: CR

FEATURES:

SOT-963 CASE

• Power Dissipation: 125mW

• Low Package Profile: 0.5mm (MAX)

• Device is Halogen Free by design

• Low r

• Low Threshold Voltage

• Logic Level Compatible

• Small SOT-963 Surface Mount Package

APPLICATIONS:

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Powered Portable Devices

DS(ON)

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

SYMBOL

UNITS

°C

8.0

160

200

125

stg

Continuous Drain Current, t <5.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

1000

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

100

UNITS

, I

=5.0V, V =0

GSSF GSSR

=5.0V, V =0

DSS

=16V, V =0

100

=0, I =250μA

DSS

I =250μA

0.4

1.0

3.0

4.0

6.0

GS(th)

DS GS, D

=4.5V, I =100mA

1.5

2.0

3.0

4.0

7.0

1.3

2.2

9.0

3.0

DS(ON)

=2.5V, I =50mA

=1.8V, I =20mA

=1.5V, I =10mA

=1.2V, I =1.0mA

=5.0V, I =125mA

=15V, V =0, f=1.0MHz

rss

iss

=15V, V =0, f=1.0MHz

oss

=10V, V =4.5V, I =200mA

off

=10V, V =4.5V, I =200mA

150

R3 (8-February 2010)

中文翻译

下载PDF

与CMRDM3590_10相关器件

型号	品牌	获取价格	描述	数据表
CMRDM3590_12	CENTRAL	获取价格	SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CMRDM3590TIN/LEAD	CENTRAL	获取价格	Small Signal Field-Effect Transistor,
CMRDM3590TR	CENTRAL	获取价格	Small Signal Field-Effect Transistor, 0.16A I(D), 20V, 2-Element, N-Channel, Silicon, Meta
CMRDM3590TRPBFREE	CENTRAL	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CMRDM7590	CENTRAL	获取价格	SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS
CMRDM7590_12	CENTRAL	获取价格	SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CMRDM7590BKLEADFREE	CENTRAL	获取价格	Transistor
CMRDM7590BKPBFREE	CENTRAL	获取价格	Transistor,
CMRDM7590TR	CENTRAL	获取价格	Small Signal Field-Effect Transistor, 0.14A I(D), 20V, 2-Element, P-Channel, Silicon, Meta
CMRDM7590TRPBFREE	CENTRAL	获取价格	暂无描述