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CMRDM7590BKPBFREE PDF预览

CMRDM7590BKPBFREE

更新时间: 2024-09-21 07:18:23
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 416K
描述
Transistor,

CMRDM7590BKPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.61
最大漏极电流 (Abs) (ID):0.14 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.125 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

CMRDM7590BKPBFREE 数据手册

 浏览型号CMRDM7590BKPBFREE的Datasheet PDF文件第2页 
CMRDM7590  
SURFACE MOUNT  
DUAL P-CHANNEL  
ENHANCEMENT-MODE  
SILICON MOSFETS  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMRDM7590 is  
an Enhancement-mode Dual P-Channel Field Effect  
Transistor designed for high speed pulsed amplifier  
and driver applications. This MOSFET offers Low  
r
and Low Threshold Voltage.  
DS(ON)  
MARKING CODE: CW  
FEATURES:  
• Power Dissipation: 125mW  
• Low Package Profile: 0.5mm (MAX)  
SOT-963 CASE  
• Device is Halogen Free by design  
APPLICATIONS:  
• Load/Power Switches  
• Low r  
• Low Threshold Voltage  
DS(ON)  
• Power Supply Converter Circuits  
• Battery Powered Portable Devices  
• Logic Level Compatibility  
• Small SOT-963 Surface Mount Package  
MAXIMUM RATINGS: (T =25°C)  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current (Steady State)  
SYMBOL  
UNITS  
V
V
mA  
mA  
mW  
°C  
A
V
V
I
I
20  
8.0  
140  
180  
125  
DS  
GS  
D
D
D
stg  
Continuous Drain Current, t <5.0s  
p
Power Dissipation  
P
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
1000  
J
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
, I  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5.0V, V =0  
100  
50  
100  
nA  
GSSF GSSR  
DSS  
DSS  
GS  
DS  
DS  
GS  
DS  
=5.0V, V =0  
nA  
nA  
V
V
Ω
Ω
Ω
Ω
Ω
nC  
nC  
nC  
S
pF  
pF  
pF  
ns  
ns  
GS  
=16V, V =0  
GS  
BV  
V
=0, I =250μA  
20  
0.4  
DSS  
GS(th)  
D
=V  
I =250μA  
=4.5V, I =100mA  
1.0  
5.0  
7.0  
10  
DS GS, D  
r
r
r
r
r
Q
Q
Q
4.0  
5.5  
8.0  
11  
20  
0.536  
0.292  
0.236  
1.3  
1.0  
12  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
GS  
GS  
GS  
GS  
GS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
DD  
DD  
D
=2.5V, I =50mA  
=1.8V, I =20mA  
=1.5V, I =10mA  
=1.2V, I =1.0mA  
=10V, V =4.5V, I =100mA  
=10V, V =4.5V, I =100mA  
D
D
D
D
GS  
GS  
17  
g(tot)  
gs  
D
D
D
=10V, V =4.5V, I =100mA  
GS  
gd  
FS  
rss  
iss  
oss  
g
=5.0V, I =125mA  
D
C
C
C
t
t
=15V, V =0, f=1.0MHz  
GS  
=15V, V =0, f=1.0MHz  
GS  
GS  
GS  
=15V, V =0, f=1.0MHz  
=10V, V =4.5V, I =200mA  
=10V, V =4.5V, I =200mA  
GS  
2.7  
60  
210  
on  
off  
D
D
R2 (2-August 2011)  

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