Datasheet > CMPT3410BKPBFREE

CMPT3410BKPBFREE

更新时间： 2024-11-11 05:33:19

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	388K
描述
Transistor,

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中文翻译

获取价格

技术参数
数据手册

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CMPT3410BKPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	1 A	配置：	Single
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.35 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	100 MHz	Base Number Matches：	1

CMPT3410BKPBFREE 数据手册

CMPT3410

www.centralsemi.com

SURFACE MOUNT

LOW V

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT3410 type is

a NPN Low V silicon transistor manufactured

by the epitaxial planar process and epoxy molded in

an SOT-23 surface mount package. This device is

designed for battery driven, handheld devices requiring

CE(SAT)

NPN SILICON TRANSISTOR

CE(SAT)

high current and Low V

CE(SAT)

MARKING CODE: C341

SOT-23 CASE

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Peak Collector Current

1.0

1.5

Power Dissipation

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=40V

100

CBO

EBO

=6.0V

100

I =100μA

CBO

CEO

I =10mA

I =100μA

6.0

EBO

I =50mA, I =5.0mA

CE(SAT)

BE(SAT)

BE(ON)

I =100mA, I =10mA

I =200mA, I =20mA

150

250

400

450

1.1

0.9

I =500mA, I =50mA

190

290

360

I =800mA, I =80mA

I =1.0A, I =100mA

I =800mA, I =80mA

=1.0V, I =10mA

100

=1.0V, I =100mA

300

=1.0V, I =500mA

=1.0V, I =1.0A

=10V, I =50mA, f=100MHz

100

MHz

=10V, I =0, f=1.0MHz

6.0

R2 (1-August 2011)

中文翻译

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