Datasheet > CMPT3904E_10

CMPT3904E_10

更新时间： 2024-09-21 09:27:43

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	331K
描述
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

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CMPT3904E_10 数据手册

CMPT3904E NPN

CMPT3906E PNP

www.centralsemi.com

ENHANCED SPECIFICATION

SURFACE MOUNT COMPLEMENTARY

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT3904E and

CMPT3906E are Enhanced versions of the CMPT3904

and CMPT3906 complementary switching transistors in

a SOT-23 surface mount package, designed for small

signal switching applications, interface circuit & driver

circuit applications.

ENHANCED SPECIFICATIONS:

♦ BV

from 40V min to 60V min. (CMPT3906E)

CBO

EBO

from 5.0V min to 6.0V min. (CMPT3906E)

SOT-23 CASE

♦ V

from 0.3V max to 0.2V max. (CMPT3904E)

from 0.4V max to 0.2V max. (CMPT3906E)

from 60 min to 70 min. (CMPT3904E) (CMPT3906E)

CE(SAT)

MARKING CODE: CMPT3904E: C1AE

CMPT3906E: C2AE

♦ h

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

♦

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

CBO

CEO

EBO

6.0

Continuous Collector Current

Power Dissipation

200

°C

350

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

CMPT3904E CMPT3906E

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=30V, V =3.0V

CEV

CE EB

♦

I =10µA

115

CBO

CEO

I =1.0mA

♦

I =10µA

6.0

7.5

7.9

EBO

I =10mA, I =1.0mA

0.057

0.100

0.75

0.85

240

235

215

110

0.050

0.100

0.75

0.85

130

150

120

0.100

0.200

0.85

CE(SAT)

I =50mA, I =5.0mA

CE(SAT

)

I =10mA, I =1.0mA

0.65

BE(SAT

)

I =50mA, I =5.0mA

0.95

)

=1.0V, I =0.1mA

100

♦

♦^h

♦

=1.0V, I =1.0mA

=1.0V, I =10mA

300

=1.0V, I =50mA

=1.0V, I =100mA

♦ Enhanced specification

R3 (1-February 2010)

中文翻译

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CMPT3904GTRPBFREE	CENTRAL	获取价格	暂无描述