CMPT3904GPBFREE

更新时间： 2024-09-21 13:06:59

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	327K
描述
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中文翻译

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数据手册

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CMPT3904GPBFREE 数据手册

CMPT3904 CMPT3904G* NPN

CMPT3906 CMPT3906G* PNP

www.centralsemi.com

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

DESCRIPTION:

These CENTRAL SEMICONDUCTOR devices are

complementary silicon transistors manufactured by the

epitaxial planar process, epoxy molded in a surface

mount package, designed for small signal general

purpose amplifier and switching applications.

MARKING CODES: CMPT3904:

CMPT3906:

C1A

C2A

CMPT3904G*: CG1

CMPT3906G*: CG2

SOT-23 CASE

Device is Halogen Free by design

CMPT3904

CMPT3904G* CMPT3906G*

CMPT3906

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

5.0

Continuous Collector Current

Power Dissipation

200

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

CMPT3904

CMPT3904G*

CMPT3906

CMPT3906G*

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

=30V, V =3.0V

CEV

=30V, V =3.0V

6.0

5.0

I =10μA

CBO

CEO

I =1.0mA

I =10μA

0.20

0.30

0.85

0.95

0.25

0.40

0.85

0.95

EBO

I =10mA, I =1.0mA

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

0.65

I =50mA, I =5.0mA

=1.0V, I =0.1mA

100

=1.0V, I =1.0mA

=1.0V, I =10mA

300

=1.0V, I =50mA

=1.0V, I =100mA

R7 (1-February 2010)

中文翻译

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