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CMPT3906GTRPBFREE PDF预览

CMPT3906GTRPBFREE

更新时间: 2024-09-21 13:06:55
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
2页 327K
描述
Transistor,

CMPT3906GTRPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.61
最大集电极电流 (IC):0.2 A配置:Single
最小直流电流增益 (hFE):100最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.35 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):250 MHzBase Number Matches:1

CMPT3906GTRPBFREE 数据手册

 浏览型号CMPT3906GTRPBFREE的Datasheet PDF文件第2页 
CMPT3904 CMPT3904G* NPN  
CMPT3906 CMPT3906G* PNP  
www.centralsemi.com  
SURFACE MOUNT  
COMPLEMENTARY  
SILICON TRANSISTORS  
DESCRIPTION:  
These CENTRAL SEMICONDUCTOR devices are  
complementary silicon transistors manufactured by the  
epitaxial planar process, epoxy molded in a surface  
mount package, designed for small signal general  
purpose amplifier and switching applications.  
MARKING CODES: CMPT3904:  
CMPT3906:  
C1A  
C2A  
CMPT3904G*: CG1  
CMPT3906G*: CG2  
SOT-23 CASE  
Device is Halogen Free by design  
*
CMPT3904  
CMPT3904G* CMPT3906G*  
CMPT3906  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
A
V
V
V
60  
40  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
40  
V
V
6.0  
5.0  
Continuous Collector Current  
Power Dissipation  
I
200  
350  
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
CMPT3904  
CMPT3904G*  
CMPT3906  
CMPT3906G*  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
MIN  
MAX  
UNITS  
nA  
I
V
=30V, V =3.0V  
-
50  
-
50  
CEV  
CE  
EB  
I
V
=30V, V =3.0V  
EB  
-
60  
40  
6.0  
-
50  
-
40  
40  
5.0  
-
50  
nA  
V
BL  
CE  
BV  
BV  
BV  
I =10μA  
-
-
CBO  
CEO  
C
I =1.0mA  
-
-
V
C
I =10μA  
-
0.20  
0.30  
0.85  
0.95  
-
-
0.25  
0.40  
0.85  
0.95  
-
V
EBO  
E
V
V
V
V
I =10mA, I =1.0mA  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =50mA, I =5.0mA  
-
-
V
C
B
I =10mA, I =1.0mA  
0.65  
-
0.65  
-
V
C
B
I =50mA, I =5.0mA  
V
C
B
h
h
h
h
h
V
=1.0V, I =0.1mA  
40  
70  
100  
60  
30  
60  
80  
100  
60  
30  
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
=1.0V, I =1.0mA  
-
-
FE  
C
=1.0V, I =10mA  
300  
-
300  
-
FE  
C
=1.0V, I =50mA  
FE  
C
=1.0V, I =100mA  
-
-
FE  
C
R7 (1-February 2010)  

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