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CMPT3646TRPBFREE

更新时间： 2024-09-21 13:07:03

品牌	Logo	应用领域
CENTRAL		晶体小信号双极晶体管开关光电二极管
页数	文件大小	规格书
2页	82K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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CMPT3646TRPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	最大集电极电流 (IC)：	0.2 A
配置：	Single	最小直流电流增益 (hFE)：	30
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.35 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	350 MHz
Base Number Matches：	1

CMPT3646TRPBFREE 数据手册

Ce n t r a l

S e m ic o n d u c t o r Co r p .

CMPT3646

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR

CMPT3646 type is an NPN Silicon Transistor

manufacturedbytheepitaxialplanarprocess,

epoxy molded in a surface mount package,

designed for high current, ultra high speed

switching applications.

Marking code is C2R.

SOT-23 CASE

MAXIMUM RATINGS (T =25 C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

5.0

200

350

CBO

CES

CEO

EBO

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

-65 to +150

357

J stg

C/W

ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

0.5

3.0

UNITS

=20V

=20V, T =65 C

µA

CES

I =100µA

CBO

CES

CEO

EBO

CE(SAT)

BE(SAT)

I =10µA

I =10mA

I =100µA

5.0

I =30mA, I =3.0mA

0.20

0.30

0.28

0.50

0.95

1.20

1.70

120

I =30mA, I =3.0mA, T =65 C

I =100mA, I =10mA

I =300mA, I =30mA

I =30mA, I =3.0mA

0.75

I =100mA, I =10mA

I =300mA, I =30mA

=0.4V, I =30mA

=0.5V, I =100mA

170

中文翻译

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