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CMPP6028TRTIN/LEAD PDF预览

CMPP6028TRTIN/LEAD

更新时间: 2024-09-16 19:08:23
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 338K
描述
Programmable UJT

CMPP6028TRTIN/LEAD 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.84
最大通态电流:150 A最高工作温度:100 °C
最低工作温度:-50 °C最大功率耗散:0.167 W
子类别:Programmable Unijunction Transistors表面贴装:YES
触发设备类型:PROGRAMMABLE UJTBase Number Matches:1

CMPP6028TRTIN/LEAD 数据手册

 浏览型号CMPP6028TRTIN/LEAD的Datasheet PDF文件第2页 
CMPP6027  
CMPP6028  
www.centralsemi.com  
SURFACE MOUNT SILICON  
PROGRAMMABLE UNIJUNCTION  
TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMPP6027 and  
CMPP6028 are silicon programmable unijunction  
transistors, manufactured in a surface mount SOT-23  
package, designed for adjustable (programmable)  
characteristics such as, valley current (I ), peak current  
V
(I ), and intrinsic standoff ratio (η).  
P
MARKING CODES: CMPP6027: P27  
CMPP6028: P28  
SOT-23 CASE  
NOTE: Reverse Lead Codes Available, Add “R” to  
the end of the Part #.  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Gate-Cathode Forward Voltage  
Gate-Cathode Reverse Voltage  
Gate-Anode Reverse Voltage  
V
40  
GKF  
GKR  
GAR  
V
V
5.0  
V
40  
40  
V
Anode-Cathode Voltage  
V
V
AK  
TSM  
TRM  
TRM  
Peak Non-Repetitive Forward Current (t=10μs)  
Peak Repetitive Forward Current (t=20μs, D.C.=1.0%)  
Peak Repetitive Forward Current (t=100μs, D.C.=1.0%)  
DC Forward Anode Current  
I
5.0  
A
I
I
2.0  
A
1.0  
A
I
150  
mA  
mA  
mW  
°C  
°C  
°C/W  
T
DC Gate Current  
I
50  
G
Power Dissipation (Note 1)  
P
167  
D
Storage Temperature  
T
-55 to +150  
-50 to +100  
450  
stg  
Operating Junction Temperature  
Thermal Resistance (Note 1)  
T
J
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
CMPP6027  
CMPP6028  
SYMBOL  
TEST CONDITIONS  
V =40V  
MIN MAX  
MIN MAX  
UNITS  
nA  
nA  
μA  
μA  
μA  
μA  
mA  
V
I
I
I
I
I
I
I
10  
50  
10  
50  
GAO  
GKS  
P
S
V =40V  
S
V =10V, R =1.0M  
2.0  
0.15  
1.0  
S
G
V =10V, R =10k  
5.0  
P
S
G
V =10V, R =1.0M  
50  
25  
V
S
G
V =10V, R =10k  
70  
25  
V
S
G
V =10V, R =200  
1.5  
1.0  
V
S
G
V
V
V
V
V =10V, R =1.0M  
0.2 1.6  
0.2 0.6  
1.5  
0.2 0.6  
0.2 0.6  
1.5  
T
T
F
O
S
G
V =10V, R =10k  
V
S
G
I =50mA  
V
F
V =20V, C =0.2μF  
6.0  
6.0  
V
B
C
t
V =20V, C =0.2μF  
80  
80  
ns  
r
B
C
Notes: (1) Mounted on 2 inch square FR-4 PCB with minimum copper pad area.  
R3 (19-December 2012)  

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