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CMPS5062BK PDF预览

CMPS5062BK

更新时间: 2024-09-14 05:22:31
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CENTRAL /
页数 文件大小 规格书
2页 324K
描述
Silicon Controlled Rectifier, 0.8A I(T)RMS, 510mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, PLASTIC PACKAGE-3

CMPS5062BK 数据手册

 浏览型号CMPS5062BK的Datasheet PDF文件第2页 
CMPS5061  
CMPS5062  
CMPS5063  
CMPS5064  
www.centralsemi.com  
DESCRIPTION:  
SURFACE MOUNT  
SILICON CONTROLLED RECTIFIER  
The CENTRAL SEMICONDUCTOR CMPS5061 Series  
types are epoxy molded PNPN Silicon Controlled  
Rectifiers manufactured in an SOT-23 case, designed  
for control systems and sensing circuit applications.  
MARKING CODE: CMPS5061: P2A  
CMPS5062: P2B  
CMPS5063: P2C  
CMPS5064: P2D  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL CMPS5061 CMPS5062 CMPS5063 CMPS5064 UNITS  
A
Peak Repetitive Off-State Voltage  
Peak Repetitive Reverse Voltage  
RMS On-State Current  
V
100  
200  
300  
400  
V
DRM  
RRM  
V
100  
200  
300  
400  
V
I
0.25  
0.16  
350  
A
T(RMS)  
Average On-State Current  
Power Dissipation  
I
A
T(AV)  
P
mW  
°C  
°C  
°C/W  
D
Operating Junction Temperature  
Storage Temperature  
T
-65 to +125  
-65 to +150  
286  
J
T
stg  
Thermal Resistance  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
SYMBOL TEST CONDITIONS  
CMPS5061 CMPS5062 CMPS5063 CMPS5064  
MIN MAX MIN MAX MIN MAX MIN MAX UNITS  
A
I
I
I
I
V =Rated V  
, R =1.0KΩ  
-
1.0  
1.0  
50  
-
1.0  
1.0  
50  
-
1.0  
1.0  
50  
-
1.0  
1.0  
50  
μA  
μA  
μA  
μA  
V
DRM  
RRM  
DRM  
RRM  
D
DRM GK  
V =Rated V  
, R =1.0KΩ  
DRM GK  
-
-
-
-
D
V =Rated V  
, R =1.0KΩ, T =125°C  
-
-
-
-
D
DRM GK  
C
V =Rated V  
, R =1.0KΩ, T =125°C  
-
50  
-
50  
-
50  
-
50  
D
DRM GK  
C
V
I =1.2A  
-
1.7  
200  
0.8  
-
-
1.7  
200  
0.8  
-
-
1.7  
200  
0.8  
-
-
1.7  
200  
0.8  
-
TM  
T
I
V =7.0V, R =100Ω  
-
-
-
-
-
-
-
-
μA  
V
GT  
D
L
V
V =7.0V, R =100Ω  
GT  
GD  
D L  
V
V = Rated V  
DRM  
, R =100Ω, T =125°C  
0.1  
-
0.1  
-
0.1  
-
0.1  
-
V
D
L
C
I
t
R
=1.0KΩ  
5.0  
5.0  
5.0  
5.0  
mA  
H
GK  
V = Rated V  
, I =1.0mA,  
on  
D
GK  
DRM GT  
=1.0KΩ, di/dt=6.0A/μs  
R
2.8 TYP  
2.8 TYP  
2.8 TYP  
2.8 TYP μs  
R10 (11-February 2011)  

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