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CMPS5062LEADFREE PDF预览

CMPS5062LEADFREE

更新时间: 2024-10-30 19:30:55
品牌 Logo 应用领域
CENTRAL 光电二极管栅极
页数 文件大小 规格书
2页 324K
描述
Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, ROHS COMPLIANT, PLASTIC PACKAGE-3

CMPS5062LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.82配置:SINGLE
最大直流栅极触发电流:0.2 mAJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:0.8 A
断态重复峰值电压:200 V重复峰值反向电压:200 V
表面贴装:YES端子面层:MATTE TIN (315)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10触发设备类型:SCR
Base Number Matches:1

CMPS5062LEADFREE 数据手册

 浏览型号CMPS5062LEADFREE的Datasheet PDF文件第2页 
CMPS5061  
CMPS5062  
CMPS5063  
CMPS5064  
www.centralsemi.com  
DESCRIPTION:  
SURFACE MOUNT  
SILICON CONTROLLED RECTIFIER  
The CENTRAL SEMICONDUCTOR CMPS5061 Series  
types are epoxy molded PNPN Silicon Controlled  
Rectifiers manufactured in an SOT-23 case, designed  
for control systems and sensing circuit applications.  
MARKING CODE: CMPS5061: P2A  
CMPS5062: P2B  
CMPS5063: P2C  
CMPS5064: P2D  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL CMPS5061 CMPS5062 CMPS5063 CMPS5064 UNITS  
A
Peak Repetitive Off-State Voltage  
Peak Repetitive Reverse Voltage  
RMS On-State Current  
V
100  
200  
300  
400  
V
DRM  
RRM  
V
100  
200  
300  
400  
V
I
0.25  
0.16  
350  
A
T(RMS)  
Average On-State Current  
Power Dissipation  
I
A
T(AV)  
P
mW  
°C  
°C  
°C/W  
D
Operating Junction Temperature  
Storage Temperature  
T
-65 to +125  
-65 to +150  
286  
J
T
stg  
Thermal Resistance  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
SYMBOL TEST CONDITIONS  
CMPS5061 CMPS5062 CMPS5063 CMPS5064  
MIN MAX MIN MAX MIN MAX MIN MAX UNITS  
A
I
I
I
I
V =Rated V  
, R =1.0KΩ  
-
1.0  
1.0  
50  
-
1.0  
1.0  
50  
-
1.0  
1.0  
50  
-
1.0  
1.0  
50  
μA  
μA  
μA  
μA  
V
DRM  
RRM  
DRM  
RRM  
D
DRM GK  
V =Rated V  
, R =1.0KΩ  
DRM GK  
-
-
-
-
D
V =Rated V  
, R =1.0KΩ, T =125°C  
-
-
-
-
D
DRM GK  
C
V =Rated V  
, R =1.0KΩ, T =125°C  
-
50  
-
50  
-
50  
-
50  
D
DRM GK  
C
V
I =1.2A  
-
1.7  
200  
0.8  
-
-
1.7  
200  
0.8  
-
-
1.7  
200  
0.8  
-
-
1.7  
200  
0.8  
-
TM  
T
I
V =7.0V, R =100Ω  
-
-
-
-
-
-
-
-
μA  
V
GT  
D
L
V
V =7.0V, R =100Ω  
GT  
GD  
D L  
V
V = Rated V  
DRM  
, R =100Ω, T =125°C  
0.1  
-
0.1  
-
0.1  
-
0.1  
-
V
D
L
C
I
t
R
=1.0KΩ  
5.0  
5.0  
5.0  
5.0  
mA  
H
GK  
V = Rated V  
, I =1.0mA,  
on  
D
GK  
DRM GT  
=1.0KΩ, di/dt=6.0A/μs  
R
2.8 TYP  
2.8 TYP  
2.8 TYP  
2.8 TYP μs  
R10 (11-February 2011)  

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