5秒后页面跳转
CMLDM7003JEBKTIN/LEAD PDF预览

CMLDM7003JEBKTIN/LEAD

更新时间: 2024-11-23 13:06:55
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 118K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

CMLDM7003JEBKTIN/LEAD 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.84
最大漏极电流 (Abs) (ID):0.28 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.35 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

CMLDM7003JEBKTIN/LEAD 数据手册

 浏览型号CMLDM7003JEBKTIN/LEAD的Datasheet PDF文件第2页 
TM  
CMLDM7003  
CMLDM7003J  
SURFACE MOUNT PICOminiTM  
DUAL N-CHANNEL  
Central  
Semiconductor Corp.  
DESCRIPTION:  
ENHANCEMENT-MODE  
SILICON MOSFET  
The CENTRAL SEMICONDUCTOR CMLDM7003 and  
CMLDM7003J are Enhancement-mode N-Channel Field  
Effect Transistors, manufactured by the N-Channel  
DMOS Process, designed for high speed pulsed amplifier  
and driver applications. The CMLDM7003 utilizes the  
USA pinout configuration, while the CMLDM7003J utilizes  
the Japanese pinout configuration. These special Dual  
Transistor devices offer low drain-source on state  
resistance (r  
).  
DS(ON)  
SOT-563 CASE  
MARKING CODE: CMLDM7003:  
CMLDM7003J:  
C30  
C3J  
MAXIMUM RATINGS (T =25°C)  
A
SYMBOL  
UNITS  
Drain-Source Voltage  
Drain-Gate Voltage  
Gate-Source Voltage  
Continuous Drain Current  
Maximum Pulsed Drain Current  
Power Dissipation  
V
V
V
50  
50  
40  
300  
1.2  
350  
300  
150  
V
V
V
mA  
DS  
DG  
GS  
I
D
I
P
A
DM  
mW (Note 1)  
mW (Note 2)  
mW (Note 3)  
D
Power Dissipation  
Power Dissipation  
P
D
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
-65 to +150  
357  
°C  
°C/W  
J stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
50  
500  
1.0  
50  
UNITS  
nA  
nA  
µA  
nA  
V
V
Ω
Ω
Ω
mmhos  
pF  
pF  
pF  
V
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5V  
=10V  
=12V  
GSSF, GSSR  
GS  
GS  
GS  
DS  
GS  
GSSF, GSSR  
GSSF, GSSR  
=50V, V =0V  
DSS  
GS  
BV  
V
r
r
r
=0V, I =10µA  
D
50  
0.5  
DSS  
=V , I =250µA  
1.2  
2.3  
1.9  
1.5  
GS(th)  
DS(ON)  
DS(ON)  
DS(ON)  
DS GS D  
=1.8V, I =50mA  
D
1.6  
1.3  
1.1  
GS  
GS  
GS  
DS  
DS  
DS  
DS  
GS  
=2.5V, I =50mA  
D
=5.0V, I =50mA  
D
=10V, I =200mA  
=25V, V =0, f=1.0MHz  
GS  
=25V, V =0, f=1.0MHz  
=25V, V =0, f=1.0MHz  
GS  
=0V, I =115mA  
g
200  
FS  
D
C
C
C
V
TBD  
TBD  
TBD  
1.4  
rss  
iss  
oss  
GS  
SD  
S
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2  
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2  
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2  
R0 (26-June 2006)  

与CMLDM7003JEBKTIN/LEAD相关器件

型号 品牌 获取价格 描述 数据表
CMLDM7003JETIN/LEAD#N/A CENTRAL

获取价格

Small Signal Field-Effect Transistor,
CMLDM7003JETR CENTRAL

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CMLDM7003JETRPBFREE CENTRAL

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CMLDM7003JPBFREE CENTRAL

获取价格

Small Signal Field-Effect Transistor,
CMLDM7003JTR CENTRAL

获取价格

Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 2-Element, N-Channel, Silicon, Metal
CMLDM7003JTRLEADFREE CENTRAL

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CMLDM7003JTRPBFREE CENTRAL

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CMLDM7003T CENTRAL

获取价格

暂无描述
CMLDM7003TEG CENTRAL

获取价格

Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Meta
CMLDM7003TEGTR CENTRAL

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET