是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大漏极电流 (Abs) (ID): | 0.28 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.35 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CMLDM7003JETIN/LEAD#N/A | CENTRAL |
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Small Signal Field-Effect Transistor, | |
CMLDM7003JETR | CENTRAL |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
CMLDM7003JETRPBFREE | CENTRAL |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
CMLDM7003JPBFREE | CENTRAL |
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Small Signal Field-Effect Transistor, | |
CMLDM7003JTR | CENTRAL |
获取价格 |
Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 2-Element, N-Channel, Silicon, Metal | |
CMLDM7003JTRLEADFREE | CENTRAL |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
CMLDM7003JTRPBFREE | CENTRAL |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
CMLDM7003T | CENTRAL |
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暂无描述 | |
CMLDM7003TEG | CENTRAL |
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Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Meta | |
CMLDM7003TEGTR | CENTRAL |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |