5秒后页面跳转
捷配首页

Datasheet > CMLDM7003JTRPBFREE
CMLDM7003JTRPBFREE PDF预览

CMLDM7003JTRPBFREE

更新时间： 2024-11-20 08:50:27
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 518K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

阅读下载

中文翻译

获取价格

CMLDM7003JTRPBFREE 数据手册

 浏览型号CMLDM7003JTRPBFREE的Datasheet PDF文件第2页 
CMLDM7003  
CMLDM7003G*  
CMLDM7003J  
www.centralsemi.com  
SURFACE MOUNT  
DUAL N-CHANNEL  
ENHANCEMENT-MODE  
SILICON MOSFET  
DESCRIPTION:  
These CENTRAL SEMICONDUCTOR devices  
are dual Enhancement-mode N-Channel Field Effect  
Transistors, manufactured by the N-Channel DMOS  
Process, designed for high speed pulsed amplifier and  
driver applications. The CMLDM7003 utilizes the USA  
pinout configuration, while the CMLDM7003J utilizes  
the Japanese pinout configuration. These devices offer  
low r  
and ESD protection up to 2kV.  
DS(ON)  
MARKING CODES: CMLDM7003: C30  
CMLDM7003G*: C3G  
CMLDM7003J: C3J  
SOT-563 CASE  
Device is Halogen Free by design  
*
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
A
Drain-Source Voltage  
V
50  
50  
V
DS  
DG  
GS  
Drain-Gate Voltage  
V
V
V
V
Gate-Source Voltage  
12  
Continuous Drain Current  
Maximum Pulsed Drain Current  
Power Dissipation (Note 1)  
Power Dissipation (Note 2)  
Power Dissipation (Note 3)  
Operating and Storage Junction Temperature  
Thermal Resistance  
I
280  
mA  
A
D
I
1.5  
DM  
P
P
P
350  
mW  
mW  
mW  
°C  
D
D
D
300  
150  
T , T  
stg  
Θ
-65 to +150  
357  
J
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
100  
2.0  
UNITS  
nA  
μA  
μA  
nA  
V
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5.0V  
=10V  
=12V  
GSSF, GSSR  
GS  
GS  
GS  
DS  
GS  
I
GSSF, GSSR  
I
2.0  
GSSF, GSSR  
=50V, V =0  
GS  
50  
DSS  
BV  
=0, I =10μA  
50  
DSS  
GS(th)  
SD  
D
V
V
=V , I =250μA  
0.49  
1.0  
1.4  
3.0  
2.5  
2.0  
V
DS GS  
D
=0, I =115mA  
V
GS  
GS  
GS  
GS  
DS  
DS  
DS  
DS  
S
r
r
r
=1.8V, I =50mA  
1.6  
1.3  
1.1  
Ω
DS(ON)  
DS(ON)  
DS(ON)  
D
=2.5V, I =50mA  
Ω
D
=5.0V, I =50mA  
Ω
D
g
=10V, I =200mA  
200  
mS  
pF  
pF  
pF  
FS  
D
C
C
C
=25V, V =0, f=1.0MHz  
5.0  
50  
25  
rss  
iss  
GS  
=25V, V =0, f=1.0MHz  
GS  
=25V, V =0, f=1.0MHz  
oss  
GS  
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2  
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2  
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2  
R6 (18-January 2010)  
12

中文翻译

下载PDF

与CMLDM7003JTRPBFREE相关器件

型号 品牌 获取价格 描述 数据表
CMLDM7003T CENTRAL

获取价格

 		暂无描述
CMLDM7003TEG CENTRAL

获取价格

 		Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Meta
CMLDM7003TEGTR CENTRAL

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CMLDM7003TG CENTRAL

获取价格

 		SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CMLDM7003TG#N/A CENTRAL

获取价格

 		Small Signal Field-Effect Transistor,
CMLDM7003TGBK CENTRAL

获取价格

 		Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Meta
CMLDM7003TGBKLEADFREE CENTRAL

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CMLDM7003TGBKPBFREE CENTRAL

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CMLDM7003TGPBFREE CENTRAL

获取价格

 		Small Signal Field-Effect Transistor,
CMLDM7003TGTIN/LEAD CENTRAL

获取价格

 		Small Signal Field-Effect Transistor,

与CMLDM7003JTRPBFREE相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证