Datasheet > CMLDM7003TEGTR

CMLDM7003TEGTR

更新时间： 2024-11-24 08:33:51

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	113K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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CMLDM7003TEGTR 数据手册

CMLDM7003TEG

Central

Semiconductor Corp.

ENHANCED SPECIFICATION

SURFACE MOUNT PICOmini

DESCRIPTION:

DUAL N-CHANNEL

SILICON MOSFET

The CENTRAL SEMICONDUCTOR CMLDM7003TEG

is an Enhancement-mode N-Channel Field Effect

Transistor, manufactured by the N-Channel DMOS

Process, designed for high speed pulsed amplifier and

driver applications. These special Dual Transistor devices

offer low drain-source on state resistance (r

) and

DS(ON)

ESD protection up to 2kV, and a Gate-Source Threshold

Voltage (V ) of 0.75V MIN to 1.0V MAX.

GS(th)

MARKING CODE: TEG

SOT-563 CASE

FEATURES:

ENHANCED SPECIFICATION: V

= 1.0V MAX

GS(th)

ESD protection up to 2kV

•

Device is Halogen Free by design

•

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Maximum Pulsed Drain Current

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Power Dissipation (Note 3)

Operating and Storage Junction Temperature

Thermal Resistance

280

1.5

350

°C

300

150

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=5V

GSSF, GSSR

=10V

=12V

0.5

1.0

μA

GSSF, GSSR

μA

GSSF, GSSR

=50V, V =0V

DSS

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm²

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm²

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm²

R0 (3-June 2008)

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