是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F6 | 针数: | 6 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.63 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 50 V | 最大漏极电流 (Abs) (ID): | 0.28 A |
最大漏极电流 (ID): | 0.28 A | 最大漏源导通电阻: | 2.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 5 pF |
JESD-30 代码: | R-PDSO-F6 | JESD-609代码: | e0 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.35 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CMLDM7003TGBKLEADFREE | CENTRAL |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
CMLDM7003TGBKPBFREE | CENTRAL |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
CMLDM7003TGPBFREE | CENTRAL |
获取价格 |
Small Signal Field-Effect Transistor, | |
CMLDM7003TGTIN/LEAD | CENTRAL |
获取价格 |
Small Signal Field-Effect Transistor, | |
CMLDM7003TGTR | CENTRAL |
获取价格 |
Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Meta | |
CMLDM7003TGTRPBFREE | CENTRAL |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
CMLDM7003TRPBFREE | CENTRAL |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
CMLDM7003TTR | CENTRAL |
获取价格 |
Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Meta | |
CMLDM7005 | CENTRAL |
获取价格 |
SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS | |
CMLDM7005_1306 | CENTRAL |
获取价格 |
SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET |