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CMLDM7003TGBK PDF预览

CMLDM7003TGBK

更新时间: 2024-11-11 19:42:15
品牌 Logo 应用领域
CENTRAL 放大器光电二极管晶体管
页数 文件大小 规格书
2页 165K
描述
Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6

CMLDM7003TGBK 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.63配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:50 V最大漏极电流 (Abs) (ID):0.28 A
最大漏极电流 (ID):0.28 A最大漏源导通电阻:2.3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JESD-30 代码:R-PDSO-F6JESD-609代码:e0
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

CMLDM7003TGBK 数据手册

 浏览型号CMLDM7003TGBK的Datasheet PDF文件第2页 
TM  
CMLDM7003T  
Central  
CMLDM7003TG*  
Semiconductor Corp.  
TM  
SURFACE MOUNT PICOmini  
DUAL N-CHANNEL  
DESCRIPTION:  
ENHANCEMENT-MODE  
SILICON MOSFET  
These CENTRAL SEMICONDUCTOR devices are dual  
Enhancement-mode N-Channel Field Effect Transistors,  
manufactured by the N-Channel DMOS Process,  
designed for high speed pulsed amplifier and driver  
applications. These devices offer low r  
, low  
DS(ON)  
V
and ESD protection up to 2kV.  
GS(th),  
MARKING CODES: CMLDM7003T:  
C7T  
CMLDM7003TG*: CTG  
SOT-563 CASE  
Device is Halogen Free by design  
*
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
V
V
mA  
A
mW  
mW  
mW  
°C  
A
Drain-Source Voltage  
V
50  
50  
12  
280  
1.5  
350  
300  
150  
DS  
DG  
GS  
D
DM  
Drain-Gate Voltage  
Gate-Source Voltage  
V
V
I
Continuous Drain Current  
Maximum Pulsed Drain Current  
Power Dissipation (Note 1)  
Power Dissipation (Note 2)  
Power Dissipation (Note 3)  
I
P
P
P
D
D
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
stg  
-65 to +150  
357  
J
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
I
, I  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5.0V  
=10V  
=12V  
50  
nA  
GSSF GSSR  
GS  
GS  
GS  
DS  
GS  
, I  
0.5  
1.0  
50  
μA  
μA  
nA  
V
V
V
Ω
Ω
Ω
mS  
pF  
pF  
pF  
GSSF GSSR  
, I  
GSSF GSSR  
=50V, V =0V  
DSS  
GS  
BV  
V
V
=0V, I =10μA  
50  
0.75  
DSS  
GS(th)  
SD  
D
=V , I =250μA  
1.2  
1.4  
2.3  
1.9  
1.5  
DS GS  
D
=0V, I =115mA  
=1.8V, I =50mA  
=2.5V, I =50mA  
=5.0V, I =50mA  
=10V, I =200mA  
=25V, V =0, f=1.0MHz  
GS  
=25V, V =0, f=1.0MHz  
GS  
GS  
GS  
GS  
DS  
DS  
DS  
DS  
S
r
r
r
1.6  
1.3  
1.1  
DS(ON)  
DS(ON)  
DS(ON)  
D
D
D
D
g
200  
FS  
C
C
C
5.0  
50  
25  
rss  
iss  
oss  
GS  
=25V, V =0, f=1.0MHz  
GS  
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2  
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2  
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2  
R1 (8-January 2009)  

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