5秒后页面跳转
CMLDM7120TGTIN/LEAD PDF预览

CMLDM7120TGTIN/LEAD

更新时间: 2024-11-11 21:10:59
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
3页 544K
描述
Small Signal Field-Effect Transistor,

CMLDM7120TGTIN/LEAD 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Base Number Matches:1

CMLDM7120TGTIN/LEAD 数据手册

 浏览型号CMLDM7120TGTIN/LEAD的Datasheet PDF文件第2页浏览型号CMLDM7120TGTIN/LEAD的Datasheet PDF文件第3页 
CMLDM7120TG  
SURFACE MOUNT SILICON  
N-CHANNEL  
ENHANCEMENT-MODE  
MOSFET  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLDM7120TG  
is an enhancement-mode N-Channel MOSFET,  
manufactured by the N-Channel DMOS Process,  
designed for high speed pulsed amplifier and driver  
applications. This MOSFET offers low r  
MAX threshold voltage of 0.85V.  
and a  
DS(ON)  
MARKING CODE: CT7  
FEATURES:  
SOT-563 CASE  
Device is Halogen Free by design  
ESD protection up to 2kV  
APPLICATIONS:  
Load/Power switches  
Power supply converter circuits  
Battery powered portable equipment  
Low r  
(0.25Ω MAX @ V =1.5V)  
DS(ON)  
GS  
MAX Threshold Voltage (0.85V)  
Logic level compatibility  
MAXIMUM RATINGS: (T =25°C)  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current (Steady State)  
Maximum Pulsed Drain Current, tp=10μs  
Power Dissipation (Note 1)  
Power Dissipation (Note 2)  
Power Dissipation (Note 3)  
SYMBOL  
UNITS  
V
V
A
A
mW  
mW  
mW  
°C  
A
V
V
I
20  
8.0  
1.0  
4.0  
350  
DS  
GS  
D
I
DM  
P
P
P
D
D
D
300  
150  
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
10  
UNITS  
μA  
μA  
V
V
V
Ω
Ω
Ω
Ω
I
I
, I  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=8.0V, V =0  
GSSF GSSR  
DSS  
GS  
DS  
GS  
DS  
GS  
GS  
GS  
GS  
GS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
DD  
DD  
DS  
=20V, V =0  
GS  
BV  
V
V
=0, I =250μA  
20  
0.5  
DSS  
GS(th)  
SD  
D
=10V, I =1.0mA  
0.85  
1.10  
0.10  
0.14  
0.25  
D
=0, I =1.0A  
S
r
r
r
r
=4.5V, I =0.5A  
0.075  
0.10  
0.20  
0.80  
2.5  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
FS  
rss  
iss  
oss  
g(tot)  
gs  
D
=2.5V, I =0.5A  
D
=1.5V, I =0.1A  
D
=1.2V, I =0.1A  
D
g
=10V, I =0.5A  
S
D
C
C
C
Q
Q
Q
=10V, V =0, f=1.0MHz  
45  
pF  
pF  
pF  
nC  
nC  
nC  
ns  
ns  
GS  
=10V, V =0, f=1.0MHz  
220  
120  
2.4  
0.25  
0.65  
25  
GS  
=10V, V =0, f=1.0MHz  
GS  
=10V, V =4.5V, I =1.0A  
GS D  
=10V, V =4.5V, I =1.0A  
GS  
D
D
D
D
=10V, V =4.5V, I =1.0A  
gd  
GS  
t
t
=10V, V =5.0V, I =0.5A  
on  
off  
GS  
=10V, V =5.0V, I =0.5A  
140  
GS  
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2  
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2  
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2  
R4 (8-June 2015)  

与CMLDM7120TGTIN/LEAD相关器件

型号 品牌 获取价格 描述 数据表
CMLDM7120TGTR CENTRAL

获取价格

Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-o
CMLDM7120TGTRLEADFREE CENTRAL

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CMLDM7120TGTRPBFREE CENTRAL

获取价格

暂无描述
CMLDM7484 CENTRAL

获取价格

N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS
CMLDM7585 CENTRAL

获取价格

SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS
CMLDM7585_13 CENTRAL

获取价格

SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS
CMLDM7585PBFREE CENTRAL

获取价格

暂无描述
CMLDM7585TRTIN/LEAD CENTRAL

获取价格

Transistor
CMLDM8002A CENTRAL

获取价格

SURFACE MOUNT PICOmini DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CMLDM8002A_10 CENTRAL

获取价格

SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET