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CMLDM7003JETIN/LEAD#N/A PDF预览

CMLDM7003JETIN/LEAD#N/A

更新时间： 2024-11-19 13:06:55
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 118K
描述
Small Signal Field-Effect Transistor,

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CMLDM7003JETIN/LEAD#N/A 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：compliant风险等级：5.57
Base Number Matches：1

CMLDM7003JETIN/LEAD#N/A 数据手册

 浏览型号CMLDM7003JETIN/LEAD#N/A的Datasheet PDF文件第2页 
TM  
CMLDM7003  
CMLDM7003J  
SURFACE MOUNT PICOminiTM  
DUAL N-CHANNEL  
Central  
Semiconductor Corp.  
DESCRIPTION:  
ENHANCEMENT-MODE  
SILICON MOSFET  
The CENTRAL SEMICONDUCTOR CMLDM7003 and  
CMLDM7003J are Enhancement-mode N-Channel Field  
Effect Transistors, manufactured by the N-Channel  
DMOS Process, designed for high speed pulsed amplifier  
and driver applications. The CMLDM7003 utilizes the  
USA pinout configuration, while the CMLDM7003J utilizes  
the Japanese pinout configuration. These special Dual  
Transistor devices offer low drain-source on state  
resistance (r  
).  
DS(ON)  
SOT-563 CASE  
MARKING CODE: CMLDM7003:  
CMLDM7003J:  
C30  
C3J  
MAXIMUM RATINGS (T =25°C)  
A
SYMBOL  
UNITS  
Drain-Source Voltage  
Drain-Gate Voltage  
Gate-Source Voltage  
Continuous Drain Current  
Maximum Pulsed Drain Current  
Power Dissipation  
V
V
V
50  
50  
40  
300  
1.2  
350  
300  
150  
V
V
V
mA  
DS  
DG  
GS  
I
D
I
P
A
DM  
mW (Note 1)  
mW (Note 2)  
mW (Note 3)  
D
Power Dissipation  
Power Dissipation  
P
D
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
-65 to +150  
357  
°C  
°C/W  
J stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
50  
500  
1.0  
50  
UNITS  
nA  
nA  
µA  
nA  
V
V
Ω
Ω
Ω
mmhos  
pF  
pF  
pF  
V
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5V  
=10V  
=12V  
GSSF, GSSR  
GS  
GS  
GS  
DS  
GS  
GSSF, GSSR  
GSSF, GSSR  
=50V, V =0V  
DSS  
GS  
BV  
V
r
r
r
=0V, I =10µA  
D
50  
0.5  
DSS  
=V , I =250µA  
1.2  
2.3  
1.9  
1.5  
GS(th)  
DS(ON)  
DS(ON)  
DS(ON)  
DS GS D  
=1.8V, I =50mA  
D
1.6  
1.3  
1.1  
GS  
GS  
GS  
DS  
DS  
DS  
DS  
GS  
=2.5V, I =50mA  
D
=5.0V, I =50mA  
D
=10V, I =200mA  
=25V, V =0, f=1.0MHz  
GS  
=25V, V =0, f=1.0MHz  
=25V, V =0, f=1.0MHz  
GS  
=0V, I =115mA  
g
200  
FS  
D
C
C
C
V
TBD  
TBD  
TBD  
1.4  
rss  
iss  
oss  
GS  
SD  
S
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2  
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2  
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2  
R0 (26-June 2006)  
12

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与CMLDM7003JETIN/LEAD#N/A相关器件

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CMLDM7003JETR CENTRAL

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 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CMLDM7003JETRPBFREE CENTRAL

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CMLDM7003JPBFREE CENTRAL

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CMLDM7003JTR CENTRAL

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CMLDM7003JTRLEADFREE CENTRAL

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 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CMLDM7003JTRPBFREE CENTRAL

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CMLDM7003T CENTRAL

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 		暂无描述
CMLDM7003TEG CENTRAL

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 		Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Meta
CMLDM7003TEGTR CENTRAL

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 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CMLDM7003TG CENTRAL

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 		SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

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