是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.57 |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 50 V |
最大漏极电流 (ID): | 0.28 A | 最大漏源导通电阻: | 2.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 5 pF |
JESD-30 代码: | R-PDSO-F6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN (315) | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CMLDM7003TEGTR | CENTRAL |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
CMLDM7003TG | CENTRAL |
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SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | |
CMLDM7003TG#N/A | CENTRAL |
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Small Signal Field-Effect Transistor, | |
CMLDM7003TGBK | CENTRAL |
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Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Meta | |
CMLDM7003TGBKLEADFREE | CENTRAL |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
CMLDM7003TGBKPBFREE | CENTRAL |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
CMLDM7003TGPBFREE | CENTRAL |
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Small Signal Field-Effect Transistor, | |
CMLDM7003TGTIN/LEAD | CENTRAL |
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Small Signal Field-Effect Transistor, | |
CMLDM7003TGTR | CENTRAL |
获取价格 |
Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Meta | |
CMLDM7003TGTRPBFREE | CENTRAL |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |