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CM1200E4C-34N PDF预览

CM1200E4C-34N

更新时间: 2024-10-30 03:32:35
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率控制局域网高功率电源
页数 文件大小 规格书
6页 60K
描述
HIGH POWER SWITCHING USE INSULATED TYPE

CM1200E4C-34N 技术参数

生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X7针数:7
Reach Compliance Code:unknown风险等级:5.24
外壳连接:ISOLATED最大集电极电流 (IC):1200 A
集电极-发射极最大电压:1700 V配置:SINGLE WITH BUILT-IN DIODE
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X7
元件数量:1端子数量:7
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):6500 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):1500 ns
标称接通时间 (ton):1400 nsVCEsat-Max:2.8 V
Base Number Matches:1

CM1200E4C-34N 数据手册

 浏览型号CM1200E4C-34N的Datasheet PDF文件第2页浏览型号CM1200E4C-34N的Datasheet PDF文件第3页浏览型号CM1200E4C-34N的Datasheet PDF文件第4页浏览型号CM1200E4C-34N的Datasheet PDF文件第5页浏览型号CM1200E4C-34N的Datasheet PDF文件第6页 
MITSUBISHI HVIGBT MODULES  
CM1200E4C-34N  
HIGH POWER SWITCHING USE  
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
CM1200E4C-34N  
IC................................................................ 1200A  
VCES ....................................................... 1700V  
Insulated Type  
1-element in a Pack (for brake)  
AISiC Baseplate  
Trench Gate IGBT : CSTBT™  
Soft Reverse Recovery Diode  
APPLICATION  
Traction drives, DC choppers, Dynamic braking choppers  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
130±0.5  
4 - M8 NUTS  
57±0.25  
57±0.25  
4(C)  
2(A)  
C
4
2
1
G
E
3
3(E)  
1(K)  
CIRCUIT DIAGRAM  
C
E
G
10.35±0.2  
3 - M4 NUTS  
6 - φ 7 MOUNTING HOLES  
10.65±0.2  
48.8±0.2  
15±0.2  
40±0.2  
screwing depth  
min. 16.5  
61.5±0.3  
5.2±0.2  
18±0.2  
screwing depth  
min. 7.7  
LABEL  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
Jul. 2005  

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