是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-XUFM-X9 |
Reach Compliance Code: | unknown | 风险等级: | 5.24 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 1200 A |
集电极-发射极最大电压: | 2500 V | 配置: | COMPLEX |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X9 |
元件数量: | 3 | 端子数量: | 9 |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 15630 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 3500 ns |
标称接通时间 (ton): | 3600 ns | VCEsat-Max: | 3.64 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CM1200HB-50H_05 | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
CM1200HB66H | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 3.3KV V(BR)CES | 1.2KA I(C) | |
CM1200HB-66H | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
CM1200HB-66H | POWEREX |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
CM1200HB-66H_05 | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
CM1200HC-34H | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
CM1200HC-50H | POWEREX |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
CM1200HC-50H | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
CM1200HC-50H_09 | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
CM1200HC-66H | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE |