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CM1200HB-50H PDF预览

CM1200HB-50H

更新时间: 2024-11-30 02:51:55
品牌 Logo 应用领域
三菱 - MITSUBISHI 开关高功率电源
页数 文件大小 规格书
4页 51K
描述
HIGH POWER SWITCHING USE INSULATED TYPE

CM1200HB-50H 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X9
Reach Compliance Code:unknown风险等级:5.24
外壳连接:ISOLATED最大集电极电流 (IC):1200 A
集电极-发射极最大电压:2500 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X9
元件数量:3端子数量:9
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):15630 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):3500 ns
标称接通时间 (ton):3600 nsVCEsat-Max:3.64 V
Base Number Matches:1

CM1200HB-50H 数据手册

 浏览型号CM1200HB-50H的Datasheet PDF文件第2页浏览型号CM1200HB-50H的Datasheet PDF文件第3页浏览型号CM1200HB-50H的Datasheet PDF文件第4页 
MITSUBISHI HVIGBT MODULES  
CM1200HB-50H  
HIGH POWER SWITCHING USE  
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
CM1200HB-50H  
IC................................................................ 1200A  
VCES ....................................................... 2500V  
Insulated Type  
1-element in a pack  
APPLICATION  
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
190  
171  
C
C
C
6 - M8 NUTS  
57±0.25  
57±0.25  
57±0.25  
C
G
E
C
C
C
E
E
E
CM  
E
E
E
CIRCUIT DIAGRAM  
C
E
G
20.25  
41.25  
8 - φ7MOUNTING HOLES  
3 - M4 NUTS  
79.4  
15  
61.5  
61.5  
40  
13  
5.2  
LABEL  
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)  
Mar. 2003  

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