Datasheet > CM1200HG-66H

CM1200HG-66H

更新时间： 2024-11-17 20:28:47

品牌	Logo	应用领域
POWEREX		局域网栅功率控制晶体管
页数	文件大小	规格书
7页	68K
描述
Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel, MODULE-9

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CM1200HG-66H 数据手册

MITSUBISHI HVIGBT MODULES

CM1200HG-66H

HIGH POWER SWITCHING USE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

INSULATED TYPE

CM1200HG-66H

● IC................................................................ 1200A

● VCES ....................................................... 3300V

● High Insulated Type

● 1-element in a Pack

● AISiC Baseplate

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

190±0.5

5 - M8 NUTS

57±0.25

(6)

(4)

(2)

(5)

(3)

(1)

CIRCUIT DIAGRAM

3 - M4 NUTS

8 - φ 7 MOUNTING HOLES

14±0.3

59.2±0.5

61.2±0.5

12±0.3

18±0.3

screwing depth

min. 16.5

41±0.5

22±0.3

screwing depth

min. 7.7

LABEL

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005

12 3 4 5 6 7

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CM1200HG-66H_09	MITSUBISHI	获取价格	HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HG-90R	MITSUBISHI	获取价格	HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HG-90R_13	MITSUBISHI	获取价格	HIGH POWER SWITCHING USE INSULATED TYPE
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CM1203-01CS	CALMIRCO	获取价格	1, 2 and 3-Channel ESD Arrays in CSP
CM1203-02CP	CALMIRCO	获取价格	1, 2 and 3-Channel ESD Arrays in CSP