Datasheet > CM1200HCB-66X

CM1200HCB-66X

更新时间： 2024-06-27 12:10:27

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CM1200HCB-66X 数据手册

< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >

CM1200HCB-66X

HIGH POWER SWITCHING USE

INSULATED TYPE

5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM1200HCB-66X



I_{C ꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏ}1200A

V_{CESꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏ}3300V

1-element in a Pack

Insulated Type

CSTBT^TM(III)

RFC Diode

AlSiC Baseplate

UL recognized under UL1557

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

Dec. 2022 _(HVM-1086-F)

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
CM1200HG-66H	MITSUBISHI	获取价格	HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HG-66H	POWEREX	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
CM1200HG-66H_09	MITSUBISHI	获取价格	HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HG-90R	MITSUBISHI	获取价格	HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HG-90R_13	MITSUBISHI	获取价格	HIGH POWER SWITCHING USE INSULATED TYPE
CM1201	APPLIED POWER	获取价格	DFN1.2*1.2-3L
CM1202	APPLIED POWER	获取价格	DFN1.2*1.2-3L
CM1203	CALMIRCO	获取价格	1, 2 and 3-Channel ESD Arrays in CSP
CM1203	CML	获取价格	S-8 Single Contact Bayonet Base
CM1203-01CP	CALMIRCO	获取价格	1, 2 and 3-Channel ESD Arrays in CSP