是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-XUFM-X9 |
Reach Compliance Code: | unknown | 风险等级: | 5.23 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 1200 A | 集电极-发射极最大电压: | 3300 V |
配置: | COMPLEX | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X9 | 元件数量: | 3 |
端子数量: | 9 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 15630 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 3500 ns | 标称接通时间 (ton): | 3600 ns |
VCEsat-Max: | 4.94 V | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
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