Datasheet > CM1200HCB-34N

CM1200HCB-34N

更新时间： 2024-09-27 12:50:55

品牌	Logo	应用领域
三菱 - MITSUBISHI		开关高功率电源
页数	文件大小	规格书
7页	100K
描述
HIGH POWER SWITCHING USE INSULATED TYPE

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中文翻译

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数据手册

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CM1200HCB-34N 数据手册

MITSUBISHI HVIGBT MODULES

CM1200HCB-34N

HIGH POWER SWITCHING USE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

INSULATED TYPE

CM1200HCB-34N

● IC................................................................ 1200A

● VCES ....................................................... 1700V

● Insulated Type

● 1-element in a Pack

● AISiC Baseplate

● Trench Gate IGBT : CSTBT

● Soft Reverse Recovery Diode

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

130 0.5

114 ^0.1

4 - M8 NUTS

0.1

CIRCUIT DIAGRAM

10.35 0.2

6 - φ7 0.1MOUNTING HOLES

3 - M4 NUTS

10.65 0.2

48.8 0.3

screwing depth

min. 16.5

15 0.2

61.5 0.3

40 0.3

screwing depth

min. 7.7

5.2 0.2

18 0.2

LABEL

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009

12 3 4 5 6 7

中文翻译

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与CM1200HCB-34N相关器件

型号	品牌	获取价格	描述	数据表
CM1200HCB-66X	MITSUBISHI	获取价格	HVIGBT模块 / HVIPM X系列 CM1200HCB-66X
CM1200HG-66H	MITSUBISHI	获取价格	HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HG-66H	POWEREX	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
CM1200HG-66H_09	MITSUBISHI	获取价格	HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HG-90R	MITSUBISHI	获取价格	HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HG-90R_13	MITSUBISHI	获取价格	HIGH POWER SWITCHING USE INSULATED TYPE
CM1201	APPLIED POWER	获取价格	DFN1.2*1.2-3L
CM1202	APPLIED POWER	获取价格	DFN1.2*1.2-3L
CM1203	CALMIRCO	获取价格	1, 2 and 3-Channel ESD Arrays in CSP
CM1203	CML	获取价格	S-8 Single Contact Bayonet Base