Datasheet > CDP1821CD3

CDP1821CD3

更新时间： 2024-01-13 06:07:55

品牌	Logo	应用领域
英特矽尔 - INTERSIL		内存集成电路静态存储器
页数	文件大小	规格书
7页	36K
描述
High-Reliability CMOS 1024-Word x 1-Bit Static RAM

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技术参数
数据手册

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CDP1821CD3 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.79	Is Samacsys：	N
最长访问时间：	255 ns	JESD-30 代码：	R-CDIP-T16
内存密度：	1024 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	1	功能数量：	1
端子数量：	16	字数：	1024 words
字数代码：	1000	工作模式：	ASYNCHRONOUS
最高工作温度：	125 °C	最低工作温度：	-55 °C
组织：	1KX1	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	IN-LINE
并行/串行：	PARALLEL	认证状态：	COMMERCIAL
最大供电电压 (Vsup)：	6.5 V	最小供电电压 (Vsup)：	4 V
标称供电电压 (Vsup)：	5 V	表面贴装：	NO
技术：	CMOS	温度等级：	MILITARY
端子形式：	THROUGH-HOLE	端子位置：	DUAL
Base Number Matches：	1

CDP1821CD3 数据手册

CDP1821C/3

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or speciﬁcations at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate

and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which

may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

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Melbourne, FL 32902

TEL: (407) 724-7000

FAX: (407) 724-7240

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