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C3D04065 PDF预览

C3D04065

更新时间: 2024-10-30 01:22:39
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
6页 795K
描述
Silicon Carbide Schottky Diode

C3D04065 数据手册

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C3D04065E  
VRRM  
=
650 V  
Silicon Carbide Schottky Diode  
IF (TC=135˚C) =ꢀ7.5ꢀA  
Qcꢀ ꢀꢀ ꢀꢀꢀ=ꢀꢀ ꢀ8.5ꢀnC  
Z-Rec® RectifieR  
Features  
Package  
•ꢀ 650-VoltꢀSchottkyꢀRectifier  
•ꢀ OptimizedꢀforꢀPFCꢀBoostꢀDiodeꢀApplication  
•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent  
•ꢀ ZeroꢀForwardꢀRecoveryꢀVoltage  
•ꢀ High-FrequencyꢀOperation  
•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior  
•ꢀ ExtremelyꢀFastꢀSwitching  
•ꢀ PositiveꢀTemperatureꢀCoefficientꢀonꢀVF  
TO-252-2  
Benefits  
•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectifiers  
•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses  
•ꢀ HigherꢀEfficiency  
PINꢀ1  
PINꢀ2  
CASE  
•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements  
•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway  
Applications  
Part Number  
Package  
Marking  
•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ  
•ꢀ PowerꢀFactorꢀCorrection  
C3D04065E  
TO-252-2  
C3D04065  
-ꢀTypicalꢀPFCꢀPoutꢀ:ꢀ400W-600W  
Maximum Ratings (TCꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspecified)  
Symbol Parameter  
Value  
650  
Unit  
Test Conditions  
Note  
VRRM  
VRSM  
VDC  
RepetitiveꢀPeakꢀReverseꢀVoltage  
V
V
V
SurgeꢀPeakꢀReverseꢀVoltage  
DCꢀBlockingꢀVoltage  
650  
650  
15.5  
7.5  
4
TC=25˚C  
TC=135˚C  
TC=155˚C  
IF  
ForwardꢀContinuousꢀCurrent  
A
22  
17  
TC=25˚C,ꢀtP=10ꢀmS,ꢀHalfꢀSineꢀWaveꢀD=0.3  
TC=110˚C,ꢀtP=10ꢀmS,ꢀHalfꢀSineꢀWaveꢀD=0.3  
IFRM  
RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent  
Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent  
Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent  
PowerꢀDissipation  
A
A
31.9  
28.5  
TC=25˚C,ꢀtP=10ꢀmS,ꢀHalfꢀSineꢀWaveꢀD=0.3  
TC=110˚C,ꢀtP=10ꢀmS,ꢀHalfꢀSineꢀWaveꢀD=0.3  
IFSM  
IFSM  
110  
A
TC=25˚C,ꢀtP=10ꢀµS,ꢀPulseꢀ  
75  
32.5  
TC=25˚C  
TC=110˚C  
Ptot  
W
˚C  
-55 to  
+175  
TJꢀ,ꢀTstg  
OperatingꢀJunctionꢀandꢀStorageꢀTemperature  
1
C3D04065E Rev. -  

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