Datasheet > BY255-TB-LF

BY255-TB-LF

更新时间： 2024-09-13 20:09:19

品牌	Logo	应用领域
WTE		高压二极管
页数	文件大小	规格书
4页	60K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 1300V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

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BY255-TB-LF 数据手册

WTE

POWER SEMICONDUCTORS

3.0A HIGH VOLTAGE STANDARD DIODE

BY255

Features

!" Diffused Junction

!" Low Forward Voltage Drop

!" High Current Capability

!" High Reliability

!" High Surge Current Capability

Mechanical Data

!" Case: DO-201AD, Molded Plastic

!" Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!" Polarity: Cathode Band

!" Weight: 1.2 grams (approx.)

!" Mounting Position: Any

!" Marking: Type Number

!" Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

DO-201AD

Min

Dim

Max

—

25.4

7.20

9.50

1.30

5.30

1.20

4.80

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

BY255

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

1300

RMS Reverse Voltage

V^R(RMS)

I^O

910

3.0

Average Rectified Output Current

(Note 1)

@T_A= 75°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

200

1.0

Forward Voltage

@I_F= 3.0A

V^FM

I^RM

µA

Peak Reverse Current

@T_A= 25°C

5.0

100

At Rated DC Blocking Voltage @T_A= 100°C

Typical Junction Capacitance (Note 2)

C^j

Typical Thermal Resistance Junction to Ambient

(Note 1)

RθJA

°C/W

Operating Temperature Range

Storage Temperature Range

T^j

-65 to +125

-65 to +150

°C

T^STG

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

BY255

1 of 4

12 3 4

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