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BY268TAP PDF预览

BY268TAP

更新时间: 2024-11-05 20:06:39
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 118K
描述
0.8A, 1400V, SILICON, SIGNAL DIODE, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

BY268TAP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:E-LALF-W2
Reach Compliance Code:unknown风险等级:4.81
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:E-LALF-W2JESD-609代码:e2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:0.8 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM峰值回流温度(摄氏度):260
最大重复峰值反向电压:1400 V最大反向恢复时间:0.4 µs
表面贴装:NO技术:AVALANCHE
端子面层:TIN SILVER端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

BY268TAP 数据手册

 浏览型号BY268TAP的Datasheet PDF文件第2页浏览型号BY268TAP的Datasheet PDF文件第3页浏览型号BY268TAP的Datasheet PDF文件第4页 
BY268, BY269  
Vishay Semiconductors  
www.vishay.com  
Fast Avalanche Sinterglass Diode  
FEATURES  
• Glass passivated junction  
• Hermetically sealed package  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
APPLICATIONS  
• High voltage fast rectification diode  
949539  
MECHANICAL DATA  
Case: SOD-57  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 369 mg  
ORDERING INFORMATION (Example)  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS  
MINIMUM ORDER QUANTITY  
BY269  
BY269TR  
5000 per 10" tape and reel  
5000 per ammopack  
25 000  
25 000  
BY269  
BY269TAP  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
PACKAGE  
SOD-57  
BY268  
VR = 1400 V; IF(AV) = 0.8 A  
R = 1600 V; IF(AV) = 0.8 A  
BY269  
V
SOD-57  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
BY268  
BY269  
BY268  
BY269  
SYMBOL  
VRSM  
VRSM  
VR  
VALUE  
1600  
UNIT  
V
Peak reverse voltage, non repetitive  
1800  
V
1400  
V
Reverse voltage  
See electrical characteristics  
tp = 10 ms, half sine wave  
VR  
1600  
V
Peak forward surge current  
IFSM  
20  
A
Average forward current  
IF(AV)  
ER  
0.8  
A
Non repetitive reverse avalanche energy  
Junction and storage temperature range  
I(BR)R = 0.4 A  
10  
mJ  
°C  
Tj = Tstg  
- 55 to + 175  
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Lead length l = 10 mm, TL = constant  
On PC board with spacing 25 mm  
RthJA  
45  
K/W  
K/W  
Junction ambient  
RthJA  
100  
Rev. 1.8, 12-Sep-12  
Document Number: 86005  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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