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BY268-TR

更新时间: 2024-11-05 13:06:03
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 130K
描述
DIODE 0.8 A, SILICON, SIGNAL DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

BY268-TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:E-LALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.5外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.25 V
JESD-30 代码:E-LALF-W2JESD-609代码:e2
湿度敏感等级:1最大非重复峰值正向电流:20 A
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:0.8 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1400 V最大反向恢复时间:0.4 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子面层:Tin/Silver (Sn/Ag)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BY268-TR 数据手册

 浏览型号BY268-TR的Datasheet PDF文件第2页浏览型号BY268-TR的Datasheet PDF文件第3页浏览型号BY268-TR的Datasheet PDF文件第4页浏览型号BY268-TR的Datasheet PDF文件第5页 
BY268 / BY269  
Vishay Semiconductors  
Fast Avalanche Sinterglass Diode  
Features  
• Glass passivated junction  
• Hermetically sealed package  
e2  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Applications  
High voltage fast rectification diode  
949539  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: approx. 369 mg  
Mechanical Data  
Case: SOD-57 Sintered glass case  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Parts Table  
Part  
Type differentiation  
VR = 1400 V; IFAV = 0.8 A  
R = 1600 V; IFAV = 0.8 A  
Package  
BY268  
BY269  
SOD-57  
SOD-57  
V
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Part  
Symbol  
Value  
Unit  
V
Peak reverse voltage, non  
repetitive  
BY268  
VRSM  
1600  
BY269  
BY268  
BY269  
VRSM  
VR  
1800  
1400  
V
V
Reverse voltage  
see electrical characteristics  
tp = 10 ms, half sinewave  
VR  
1600  
V
Peak forward surge current  
Average forward current  
IFSM  
IFAV  
20  
A
0.8  
A
Junction and storage  
temperature range  
Tj = Tstg  
- 55 to + 175  
°C  
Non repetitive reverse  
avalanche energy  
I(BR)R = 0.4 A  
ER  
10  
mJ  
Maximum Thermal Resistance  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Junction ambient  
Test condition  
Part  
Symbol  
RthJA  
Value  
100  
Unit  
K/W  
on PC board with spacing  
25 mm  
L = 10 mm, TL = constant  
RthJA  
45  
K/W  
Document Number 86005  
Rev. 1.6, 13-Apr-05  
www.vishay.com  
1

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