5秒后页面跳转
BY268TR PDF预览

BY268TR

更新时间: 2024-11-05 13:06:03
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 130K
描述
0.8A, 1400V, SILICON, SIGNAL DIODE, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

BY268TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:E-LALF-W2
Reach Compliance Code:unknownFactory Lead Time:12 weeks
风险等级:5.65外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:E-LALF-W2
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:0.8 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
峰值回流温度(摄氏度):260最大重复峰值反向电压:1400 V
最大反向恢复时间:0.4 µs表面贴装:NO
技术:AVALANCHE端子面层:TIN SILVER
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

BY268TR 数据手册

 浏览型号BY268TR的Datasheet PDF文件第2页浏览型号BY268TR的Datasheet PDF文件第3页浏览型号BY268TR的Datasheet PDF文件第4页浏览型号BY268TR的Datasheet PDF文件第5页 
BY268 / BY269  
Vishay Semiconductors  
Fast Avalanche Sinterglass Diode  
Features  
• Glass passivated junction  
• Hermetically sealed package  
e2  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Applications  
High voltage fast rectification diode  
949539  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: approx. 369 mg  
Mechanical Data  
Case: SOD-57 Sintered glass case  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Parts Table  
Part  
Type differentiation  
VR = 1400 V; IFAV = 0.8 A  
R = 1600 V; IFAV = 0.8 A  
Package  
BY268  
BY269  
SOD-57  
SOD-57  
V
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Part  
Symbol  
Value  
Unit  
V
Peak reverse voltage, non  
repetitive  
BY268  
VRSM  
1600  
BY269  
BY268  
BY269  
VRSM  
VR  
1800  
1400  
V
V
Reverse voltage  
see electrical characteristics  
tp = 10 ms, half sinewave  
VR  
1600  
V
Peak forward surge current  
Average forward current  
IFSM  
IFAV  
20  
A
0.8  
A
Junction and storage  
temperature range  
Tj = Tstg  
- 55 to + 175  
°C  
Non repetitive reverse  
avalanche energy  
I(BR)R = 0.4 A  
ER  
10  
mJ  
Maximum Thermal Resistance  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Junction ambient  
Test condition  
Part  
Symbol  
RthJA  
Value  
100  
Unit  
K/W  
on PC board with spacing  
25 mm  
L = 10 mm, TL = constant  
RthJA  
45  
K/W  
Document Number 86005  
Rev. 1.6, 13-Apr-05  
www.vishay.com  
1

与BY268TR相关器件

型号 品牌 获取价格 描述 数据表
BY268-TR VISHAY

获取价格

DIODE 0.8 A, SILICON, SIGNAL DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Sign
BY269 DIODES

获取价格

0.8A FAST RECOVERY HIGH VOLTAGE GLASS BODY RECTIFIER
BY269 VISHAY

获取价格

Silicon Mesa Rectifiers
BY269GP GULFSEMI

获取价格

SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:1400 TO 1600V CURRENT: 0.
BY269TAP VISHAY

获取价格

0.8A, 1600V, SILICON, SIGNAL DIODE, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLAS
BY269-TAP VISHAY

获取价格

DIODE 0.8 A, SILICON, SIGNAL DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Sign
BY269-TR VISHAY

获取价格

DIODE 0.8 A, SILICON, SIGNAL DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Sign
BY278 NXP

获取价格

Damper diode
BY278/20 NXP

获取价格

DIODE 1700 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BY278/21 NXP

获取价格

DIODE 1700 V, SILICON, RECTIFIER DIODE, Rectifier Diode