Datasheet > BY25Q128ASWIG

BY25Q128ASWIG

更新时间： 2024-11-06 02:50:35

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		/
页数	文件大小	规格书
73页	2753K
描述
128M BIT SPI NOR FLASH

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BY25Q128ASWIG 数据手册

Boya Microelectronics

Memory Series

BY25Q128AS

128M BIT SPI NOR FLASH

Features

● Serial Peripheral Interface (SPI)

- Standard SPI: SCLK, /CS, SI, SO, /WP, /HOLD

- Dual SPI: SCLK, /CS, IO0, IO1, /WP, /HOLD

- Quad SPI: SCLK, /CS, IO0, IO1, IO2, IO3

● Read

- Normal Read (Serial): 55MHz clock rate

- Fast Read (Serial): 108MHz clock rate with 30PF load

- Dual I/O data transfer up to 216Mbits/S

- Quad I/O data transfer up to 432Mbits/S

-Continuous Read with 8/16/32/64-byte Wrap

● Program

- Serial-input Page Program up to 256bytes

- Program Suspend and Resume

● Erase

- Block erase (64/32 KB)

- Sector erase (4 KB)

- Chip erase

- Erase Suspend and Resume

● Program/Erase Speed

- Page Program time: 0.6ms typical

- Sector Erase time: 50ms typical

- Block Erase time: 0.15/0.25s typical

- Chip Erase time: 60s typical

● Flexible Architecture

- Sector of 4K-byte

- Block of 32/64K-byte

● Low Power Consumption

- 25mA maximum active current

- 5uA maximum power down current

● Software/Hardware Write Protection

- 3x256-Byte Security Registers with OTP Locks

- Discoverable Parameters (SFDP) register

- Enable/Disable protection with WP Pin

- Write protect all/portion of memory via software

- Top or Bottom, Sector or Block selection

● Single Supply Voltage

- Full voltage range: 2.7~3.6V

● Temperature Range

- Commercial (0℃ to +70℃)

- Industrial (-40℃ to +85℃)

- Industrial (-40℃ to +105℃)

● Cycling Endurance/Data Retention

- Typical 100k Program-Erase cycles on any sector

- Typical 20-year data retention

July 2020

Rev 1.5

1 / 73

12 3 4 5 6 7...73

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