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BUL147BG

更新时间： 2024-11-06 03:04:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
65页 487K
描述
8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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BUL147BG 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
*Motorola Preferred Device  
POWER TRANSISTOR  
8.0 AMPERES  
700 VOLTS  
45 and 125 WATTS  
The BUL147/BUL147F have an applications specific state–of–the–art die designed  
for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power  
supplies for all types of electronic equipment. These high–voltage/high–speed  
transistors offer the following:  
•
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain  
— Fast Switching  
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)  
Parametric Distributions are Tight and Consistent Lot–to–Lot  
Two Package Choices: Standard TO–220 or Isolated TO–220  
•
•
•
BUL147F, Isolated Case 221D, is UL Recognized to 3500 V  
: File #E69369  
RMS  
MAXIMUM RATINGS  
Rating  
Symbol  
BUL147  
BUL147F  
400  
Unit  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
CEO  
Vdc  
Vdc  
Vdc  
Adc  
V
700  
9.0  
CES  
EBO  
BUL147  
CASE 221A–06  
TO–220AB  
V
Collector Current — Continuous  
— Peak(1)  
I
C
8.0  
16  
I
CM  
Base Current — Continuous  
— Peak(1)  
I
4.0  
8.0  
Adc  
B
I
BM  
RMS Isolated Voltage(2)  
(for 1 sec, R.H. < 30%,  
Test No. 1 Per Fig. 22a  
Test No. 2 Per Fig. 22b  
Test No. 3 Per Fig. 22c  
V
ISOL  
—
—
—
4500  
3500  
1500  
Volts  
T
C
= 25°C)  
Total Device Dissipation  
Derate above 25°C  
(T = 25°C)  
C
P
D
125  
1.0  
45  
0.36  
Watts  
W/°C  
Operating and Storage Temperature  
T , T  
– 65 to 150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
BUL44  
BUL44F  
Unit  
BUL147F  
CASE 221D–02  
ISOLATED TO–220 TYPE  
UL RECOGNIZED  
Thermal Resistance — Junction to Case  
R
θJC  
R
θJA  
1.0  
62.5  
2.78  
62.5  
°C/W  
— Junction to Ambient  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
260  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)  
V
400  
—
—
—
—
Vdc  
µAdc  
µAdc  
C
CEO(sus)  
Collector Cutoff Current (V  
= Rated V  
, I = 0)  
I
CEO  
100  
CE  
CE  
CEO  
B
Collector Cutoff Current (V  
= Rated V  
, V  
= 0)  
I
—
—
—
—
—
—
100  
500  
100  
CES EB  
CES  
(T = 125°C)  
C
Collector Cutoff Current (V  
CE  
= 500 V, V  
= 0)  
(T = 125°C)  
C
EB  
= 9.0 Vdc, I = 0)  
Emitter Cutoff Current (V  
EB  
I
—
—
100  
µAdc  
C
EBO  
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.  
(2) Proper strike and creepage distance must be provided.  
(continued)  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
3–343  
Motorola Bipolar Power Transistor Device Data  
1234567...65

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BUL147BU ONSEMI

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 		TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
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 		8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL147C MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147D1 MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147DW ONSEMI

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL147F MOTOROLA

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 		POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS
BUL147F ONSEMI

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 		POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS
BUL147G ONSEMI

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 		功率 10A 400V NPN
BUL147L MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas

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