5秒后页面跳转
捷配首页

Datasheet > BUL147BD
BUL147BD PDF预览

BUL147BD

更新时间： 2024-11-30 03:04:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
65页 487K
描述
8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

阅读下载

中文翻译

获取价格

BUL147BD 数据手册

 浏览型号BUL147BD的Datasheet PDF文件第2页浏览型号BUL147BD的Datasheet PDF文件第3页浏览型号BUL147BD的Datasheet PDF文件第4页浏览型号BUL147BD的Datasheet PDF文件第5页浏览型号BUL147BD的Datasheet PDF文件第6页浏览型号BUL147BD的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
*Motorola Preferred Device  
POWER TRANSISTOR  
8.0 AMPERES  
700 VOLTS  
45 and 125 WATTS  
The BUL147/BUL147F have an applications specific state–of–the–art die designed  
for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power  
supplies for all types of electronic equipment. These high–voltage/high–speed  
transistors offer the following:  
•
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain  
— Fast Switching  
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)  
Parametric Distributions are Tight and Consistent Lot–to–Lot  
Two Package Choices: Standard TO–220 or Isolated TO–220  
•
•
•
BUL147F, Isolated Case 221D, is UL Recognized to 3500 V  
: File #E69369  
RMS  
MAXIMUM RATINGS  
Rating  
Symbol  
BUL147  
BUL147F  
400  
Unit  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
CEO  
Vdc  
Vdc  
Vdc  
Adc  
V
700  
9.0  
CES  
EBO  
BUL147  
CASE 221A–06  
TO–220AB  
V
Collector Current — Continuous  
— Peak(1)  
I
C
8.0  
16  
I
CM  
Base Current — Continuous  
— Peak(1)  
I
4.0  
8.0  
Adc  
B
I
BM  
RMS Isolated Voltage(2)  
(for 1 sec, R.H. < 30%,  
Test No. 1 Per Fig. 22a  
Test No. 2 Per Fig. 22b  
Test No. 3 Per Fig. 22c  
V
ISOL  
—
—
—
4500  
3500  
1500  
Volts  
T
C
= 25°C)  
Total Device Dissipation  
Derate above 25°C  
(T = 25°C)  
C
P
D
125  
1.0  
45  
0.36  
Watts  
W/°C  
Operating and Storage Temperature  
T , T  
– 65 to 150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
BUL44  
BUL44F  
Unit  
BUL147F  
CASE 221D–02  
ISOLATED TO–220 TYPE  
UL RECOGNIZED  
Thermal Resistance — Junction to Case  
R
θJC  
R
θJA  
1.0  
62.5  
2.78  
62.5  
°C/W  
— Junction to Ambient  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
260  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)  
V
400  
—
—
—
—
Vdc  
µAdc  
µAdc  
C
CEO(sus)  
Collector Cutoff Current (V  
= Rated V  
, I = 0)  
I
CEO  
100  
CE  
CE  
CEO  
B
Collector Cutoff Current (V  
= Rated V  
, V  
= 0)  
I
—
—
—
—
—
—
100  
500  
100  
CES EB  
CES  
(T = 125°C)  
C
Collector Cutoff Current (V  
CE  
= 500 V, V  
= 0)  
(T = 125°C)  
C
EB  
= 9.0 Vdc, I = 0)  
Emitter Cutoff Current (V  
EB  
I
—
—
100  
µAdc  
C
EBO  
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.  
(2) Proper strike and creepage distance must be provided.  
(continued)  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
3–343  
Motorola Bipolar Power Transistor Device Data  
1234567...65

中文翻译

下载PDF

与BUL147BD相关器件

型号 品牌 获取价格 描述 数据表
BUL147BG ONSEMI

获取价格

 		8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL147BS ONSEMI

获取价格

 		8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL147BU ONSEMI

获取价格

 		TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
BUL147BV ONSEMI

获取价格

 		8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL147C MOTOROLA

获取价格

 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147D1 MOTOROLA

获取价格

 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147DW ONSEMI

获取价格

 		8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL147F MOTOROLA

获取价格

 		POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS
BUL147F ONSEMI

获取价格

 		POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS
BUL147G ONSEMI

获取价格

 		功率 10A 400V NPN

与BUL147BD相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证