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BUK753R5-60E PDF预览

BUK753R5-60E

更新时间: 2024-11-25 19:59:23
品牌 Logo 应用领域
恩智浦 - NXP 局域网开关脉冲晶体管
页数 文件大小 规格书
1页 73K
描述
120A, 60V, 0.0035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN

BUK753R5-60E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
其他特性:AVALANCHE RATED雪崩能效等级(Eas):404 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):120 A
最大漏源导通电阻:0.0035 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):785 A
参考标准:AEC-Q101; IEC-60134表面贴装:NO
端子面层:TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK753R5-60E 数据手册

  
Thermal RC network (Foster)  
SPICE thermal model  
BUK753R5-60E  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Rth(j-mb)  
thermal resistance  
from junction to  
mounting base  
-
-
0.51  
K/W  
Cth1  
Cth2  
2.085E-04 F  
1.582E-03 F  
1.124E-03 F  
4.066E-03 F  
1.379E-02 F  
2.696E-02 F  
6.892E-01 F  
1.806E+02 F  
Cth3  
Cth4  
Cth5  
Cth6  
Cth7  
Cth8  
Rth1  
Rth2  
4.200E-04  
8.136E-04 Ω  
9.132E-03 Ω  
2.352E-02 Ω  
8.209E-02 Ω  
3.277E-01 Ω  
7.932E-02 Ω  
8.874E-04 Ω  
Rth3  
Rth4  
Rth5  
Rth6  
Rth7  
Rth8  
Part:  
BUK753R5-60E  
Date:  
17/4/2013  
0.52  
Model Rth  
K/W  
© 2009 NXP B.V.  
All rights reserved. Reproduction in whole or in part is prohibited without prior consent of the copyright owner. The information presented in this document does not form part of any quotation  
or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of it’s use. Publication thereof does  
not convey or imply any license under patent- or other industrial or intellectual property rights.  
Printed in the Netherlands  

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