Datasheet > BUK664R4-55C,118

BUK664R4-55C,118

更新时间： 2024-11-24 21:20:07

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	202K
描述
BUK664R4-55C - N-channel TrenchMOS intermediate level FET D2PAK 3-Pin

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BUK664R4-55C,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	D2PAK
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.76	Base Number Matches：	1

BUK664R4-55C,118 数据手册

BUK664R4-55C

D2P

N-channel TrenchMOS intermediate level FET

Rev. 03 — 21 December 2010

Product data sheet

1. Product profile

1.1 General description

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

AEC Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

Suitable for intermediate level gate

drive sources

1.3 Applications

12 V and 24 V automotive systems

Start-Stop micro-hybrid applications

Transmission control

Electric and electro-hydraulic power

steering

Ultra high performance power

Motors, lamps and solenoid control

switching

1.4 Quick reference data

Table 1.

Quick reference data

Conditions

Symbol Parameter

Min Typ Max Unit

V_DS

I_D

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 1

100

204

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

Static characteristics

R_DSondrain-source

V_GS= 5 V; I_D= 15 A; T_j= 25 °C;

11.1 13

4.2 4.9

mΩ

on-state resistance see Figure 13

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

see Figure 14

12 3 4 5 6 7...16

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