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BU2720AF PDF预览

BU2720AF

更新时间: 2024-11-30 09:02:03
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 88K
描述
isc Silicon NPN Power Transistor

BU2720AF 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Base Number Matches:1

BU2720AF 数据手册

 浏览型号BU2720AF的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BU2720AF  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= 825V (Min)  
·High Switching Speed  
APPLICATIONS  
·Designed for use in horizontal deflection circuits of color  
TV receivers.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCES  
VCEO  
VEBO  
IC  
PARAMETER  
Collector- Emitter Voltage(VBE= 0)  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
1700  
825  
7.5  
UNIT  
V
V
V
Collector Current- Continuous  
Collector Current-Peak  
10  
A
ICM  
25  
A
IB  
Base Current- Continuous  
Base Current-Peak  
14  
A
IBM  
20  
A
Collector Power Dissipation  
@ TC=25℃  
PC  
45  
W
TJ  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
2.8  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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