是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, S-PDSO-N3 |
Reach Compliance Code: | not_compliant | Factory Lead Time: | 26 weeks |
风险等级: | 5.76 | 雪崩能效等级(Eas): | 40 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 25 V | 最大漏极电流 (ID): | 27 A |
最大漏源导通电阻: | 0.0023 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | S-PDSO-N3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | SQUARE | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 160 A | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSZ018N04LS6 | INFINEON |
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Power Field-Effect Transistor, 27A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Me | |
BSZ018NE2LS | INFINEON |
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n-Channel Power MOSFET | |
BSZ018NE2LSI | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 25V, 0.0025ohm, 1-Element, N-Channel, Silicon, Me | |
BSZ018NE2LSIATMA1 | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 25V, 0.0025ohm, 1-Element, N-Channel, Silicon, Me | |
BSZ019N03LS | INFINEON |
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n-Channel Power MOSFET | |
BSZ019N03LSATMA1 | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Me | |
BSZ021N04LS6 | INFINEON |
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Power Field-Effect Transistor, | |
BSZ023N04LS | INFINEON |
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New OptiMOS⢠40V and 60V | |
BSZ024N04LS6 | INFINEON |
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The OptiMOS? 6 power MOSFET 40V family is optimized for a variety of applications and circ | |
BSZ025N04LS | INFINEON |
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英飞凌的 40V 和 60V 产品系列不仅具有行业内较低的 R DS(on),同时还具有快 |