Datasheet > BSZ039N06NS

BSZ039N06NS

更新时间： 2023-09-03 20:35:33

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1082K
描述
With BSZ039N06NS OptiMOS™ 5 60V power MOSFET Infineon expands its’ high performance MOSFET portfolio for PQFN 3.3x3.3mm package, enabling an increase in system efficiency for target applications such as server power supply and telecom bricks as well as portable chargers. The benefits are clearly visible in terms of a reduced system temperature, the improved performance leads to a more relaxed thermal management contributing further to shrink of the system size.

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BSZ039N06NS 数据手册

BSZ039N06NS

MOSFET

OptiMOS^TMꢀPower-Transistor,ꢀ60ꢀV

TSDSON-8ꢀFL

(enlarged source interconnection)

Features

•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsync.ꢀRec

•ꢀ100%ꢀavalancheꢀtested

•ꢀSuperiorꢀthermalꢀresistance

•ꢀN-channel

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

•ꢀHigherꢀsolderꢀjointꢀreliabilityꢀdueꢀtoꢀenlargedꢀsourceꢀinterconnection

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

S 1

S 2

S 3

G 4

8 D

7 D

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

6 D

5 D

Parameter

Value

Unit

V_DS

R_DS(on),max

I_D

3.9

102

mΩ

Q_oss

Q_G(0V..10V)

Typeꢀ/ꢀOrderingꢀCode

Package

PG-TSDSON-8 FL

Marking

RelatedꢀLinks

BSZ039N06NS

039N06N

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2020-11-30

12 3 4 5 6 7...11

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