型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSZ040N04LSG | INFINEON |
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OptiMOS™3 Power-Transistor | |
BSZ040N04LSGATMA1 | INFINEON |
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Power Field-Effect Transistor, 18A I(D), 40V, 0.0056ohm, 1-Element, N-Channel, Silicon, Me | |
BSZ040N04LSGXT | INFINEON |
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暂无描述 | |
BSZ040N06LS5 | INFINEON |
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英飞凌OptiMOS? 5 功率 MOSFET 逻辑电平特别适用于无线充电、适配器和电信应 | |
BSZ042N04NSG | INFINEON |
获取价格 |
OptiMOS™3 Power-Transistor | |
BSZ042N04NSGATMA1 | INFINEON |
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Power Field-Effect Transistor, 40A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Me | |
BSZ042N06NS | INFINEON |
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New OptiMOS⢠40V and 60V | |
BSZ042N06NSATMA1 | INFINEON |
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Power Field-Effect Transistor, 40A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Me | |
BSZ0500NSI | INFINEON |
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Metal Oxide Semiconductor Field Effect Transistor | |
BSZ0500NSI_15 | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor |